High-Performance Photodetector Based on Bi2Se3/GeSe Heterojunction with Band Alignment Evolution

doi:10.1002/adom.202302339

CIOMP OpenIR

	High-Performance Photodetector Based on Bi2Se3/GeSe Heterojunction with Band Alignment Evolution
	Y. H. Li; M. Q. Che; N. Zhang; Y. T. Zou; X. Y. Zhao; Y. C. Lin; B. C. Lv; X. B. Ma; Y. R. Shi; J. J. Yang; X. J. Sun; S. J. Li and D. B. Li
	2023
Source Publication	Advanced Optical Materials
ISSN	2195-1071
Pages	8
Abstract	Band alignment engineering in 2D van der Waals heterostructures is a promising method for manufacturing high-speed, high-responsivity, and high-gain photodetectors. Here, a heterojunction photodetector with the band alignment transition from type I to type II under the bias voltage using narrow bandgap material n-Bi2Se3 and polarization-sensitive material p-GeSe is designed and prepared. This photodetector possesses excellent performance of broadband detection (532-1550 nm), high responsivity (5.86 x 10(3) A W-1), high detectivity (1.50 x 10(13) Jones), significant external quantum efficiency (1.15 x 10(6)%) and fast response time (97 mu s). Compared with the conventional type II band alignment, an additional triangular potential barrier is generated in this type II band alignment evolved from type I. Notably, this triangular barrier will block photogenerated carriers in Bi2Se3, which leads to high external quantum efficiency; Furthermore, photogenerated holes can tunnel through this barrier, effectively shortening the response time. Meanwhile, the device can achieve polarization detection (anisotropic ratio = 1.74 at 808 nm) and polarization imaging, which is of great significance for reducing the bit error rate in complex environments.
DOI	10.1002/adom.202302339
URL	查看原文
Indexed By	sci ; ei
Language	英语
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Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/67658
Collection	中国科学院长春光学精密机械与物理研究所
Recommended Citation GB/T 7714	Y. H. Li,M. Q. Che,N. Zhang,et al. High-Performance Photodetector Based on Bi2Se3/GeSe Heterojunction with Band Alignment Evolution[J]. Advanced Optical Materials,2023:8.
APA	Y. H. Li.,M. Q. Che.,N. Zhang.,Y. T. Zou.,X. Y. Zhao.,...&S. J. Li and D. B. Li.(2023).High-Performance Photodetector Based on Bi2Se3/GeSe Heterojunction with Band Alignment Evolution.Advanced Optical Materials,8.
MLA	Y. H. Li,et al."High-Performance Photodetector Based on Bi2Se3/GeSe Heterojunction with Band Alignment Evolution".Advanced Optical Materials (2023):8.

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中国科学院长春光学精密机械与物理研究所