Changchun Institute of Optics,Fine Mechanics and Physics,CAS
GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity | |
Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li | |
2023 | |
发表期刊 | Ieee Transactions on Electron Devices |
ISSN | 0018-9383 |
页码 | 6 |
摘要 | In this report, a polarization-doped n-p-i-p-n GaN/AlxGa1-xN/GaN ultraviolet phototransistor with an Al0.20Ga0.80N insertion layer is proposed. The AlxGa1-xN layer with graded AlN composition is utilized as a p-type layer. The Al0.20Ga0.80N insertion layer is embedded into the unintentionally doped GaN (i-GaN) absorption layer, which can increase the conduction band barrier height and reduce the electron leakage from the substrate for the device. As a result, the dark current lower than 3.40 x 10(-11) A/cm(2) can be obtained. When the device is illuminated with ultraviolet light, the forward biased junction facilitates the photo-generated carrier transport. As a result, a photo-to-dark-current ratio (PDCR) larger than 10(4) at the applied bias of 5 V is realized. The carriers are transported in the region far apart from the device surface, and this gives rise a response with the rise time of 27 ms and decay time of 44 ms, respectively. |
DOI | 10.1109/ted.2023.3310944 |
URL | 查看原文 |
收录类别 | sci ; ei |
语种 | 英语 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/68069 |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li. GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity[J]. Ieee Transactions on Electron Devices,2023:6. |
APA | Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li.(2023).GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity.Ieee Transactions on Electron Devices,6. |
MLA | Z. Xuan, C. S. Chu, K. K. Tian, Z. J. Zhu, Z. W. Xie, K. Jiang, Y. H. Zhang, X. J. Sun, Z. H. Zhang and D. B. Li."GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al0.20Ga0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity".Ieee Transactions on Electron Devices (2023):6. |
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GaN-Based Ultraviole(1106KB) | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 |
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