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Enhanced performance of GaAs-based betavoltaic batteries by using AlGaAs hole/electron transport layers 期刊论文
Journal of Physics D-Applied Physics, 2022, 卷号: 55, 期号: 30, 页码: 9
作者:  R. Z. Zheng;  J. B. Lu;  Y. Wang;  L. Liang;  Y. G. Zeng;  L. Qin;  Y. Y. Chen;  X. Zhang;  Z. Y. Chen;  X. Y. Li;  X. X. Yuan and Y. M. Liu
浏览  |  Adobe PDF(1661Kb)  |  收藏  |  浏览/下载:120/48  |  提交时间:2023/06/14
Improvement of the photovoltaic performance of Cu2ZnSn(SxSe1-x)(4) solar cells by adding polymer in the precursor solution 期刊论文
Journal of Physics D-Applied Physics, 2018, 卷号: 51, 期号: 10, 页码: 7
作者:  Yang, G.;  Li, Y. F.;  Yao, B.;  Ding, Z. H.;  Deng, R.;  Zhao, H. F.;  Zhang, L. G.;  Zhang, Z. Z.
浏览  |  Adobe PDF(1251Kb)  |  收藏  |  浏览/下载:364/141  |  提交时间:2019/09/17
CZTSSe  PVP  additive  morphology  efficiency  thin-films  perovskite  growth  Physics  
Reinventing a p-type doping process for stable ZnO light emitting devices 期刊论文
Journal of Physics D-Applied Physics, 2018, 卷号: 51, 期号: 22, 页码: 4
作者:  Xie, X. H.;  Li, B. H.;  Zhang, Z. Z.;  Shen, D. Z.
浏览  |  Adobe PDF(1069Kb)  |  收藏  |  浏览/下载:301/100  |  提交时间:2019/09/17
zinc oxide  p-type  self-compens-tion  doping  molecular-beam epitaxy  thin-films  room-temperature  mgzno films  diodes  nanoparticles  modulation  gan(0001)  inversion  epilayers  Physics  
Zn vacancies creation via (2 x 2) surface reconstruction 期刊论文
Journal of Physics D-Applied Physics, 2017, 卷号: 50, 期号: 32
作者:  Xie, X. H.;  B. H. Li;  Z. Z. Zhang and D. Z. Shen
Adobe PDF(1979Kb)  |  收藏  |  浏览/下载:274/123  |  提交时间:2018/06/13
A facile route to realize ultraviolet emission in a nano-engineered SnO2-based light-emitting diode 期刊论文
Journal of Physics D-Applied Physics, 2015, 卷号: 48, 期号: 46, 页码: 7
作者:  Huang, Y.;  Y. F. Li;  B. Yao;  Z. H. Ding;  R. Deng;  L. G. Zhang and H. F. Zhao
Adobe PDF(1760Kb)  |  收藏  |  浏览/下载:249/100  |  提交时间:2016/07/15
A very high efficiency electrophosphorescent device doped with short triplet lifetime phosphor using multi-recombination zones 期刊论文
Journal of Physics D-Applied Physics, 2010, 卷号: 43, 期号: 10
作者:  Yang D. F.;  Han L. L.;  Li W. L.;  Chu B.;  Su Z. S.;  Zhang D. Y.;  Li T. L.;  Zhang G.;  Zhu J. Z.
Adobe PDF(609Kb)  |  收藏  |  浏览/下载:646/108  |  提交时间:2012/10/21
Degenerate layer at ZnO/sapphire interface 期刊论文
Journal of Physics D-Applied Physics, 2009, 卷号: 42, 期号: 19
作者:  Li L.;  Shan C. X.;  Wang S. P.;  Li B. H.;  Zhang J. Y.;  Yao B.;  Shen D. Z.;  Fan X. W.;  Lu Y. M.
Adobe PDF(448Kb)  |  收藏  |  浏览/下载:673/160  |  提交时间:2012/10/21
Ultraviolet photodiode based on p-Mg0.2Zn0.8O/n-ZnO heterojunction with wide response range 期刊论文
Journal of Physics D-Applied Physics, 2009, 卷号: 42, 期号: 10
作者:  Li Y. F.;  Yao B.;  Deng R.;  Li B. H.;  Zhang J. Y.;  Zhao Y. M.;  Jiang D. Y.;  Zhang Z. Z.;  Shan C. X.;  Shen D. Z.;  Fan X. W.;  Lu Y. M.
Adobe PDF(594Kb)  |  收藏  |  浏览/下载:618/138  |  提交时间:2012/10/21
Growth and photoluminescence of vertically aligned ZnO nanowires/nanowalls 期刊论文
Journal of Physics D-Applied Physics, 2009, 卷号: 42, 期号: 13
作者:  Fang F.;  Zhao D. X.;  Li B. H.;  Zhang Z. Z.;  Zhang J. Y.;  Shen D. Z.
Adobe PDF(651Kb)  |  收藏  |  浏览/下载:728/80  |  提交时间:2012/10/21
MgNiO-based metal-semiconductor-metal ultraviolet photodetector 期刊论文
Journal of Physics D-Applied Physics, 2009, 卷号: 42, 期号: 9
作者:  Zhao Y. M.;  Zhang J. Y.;  Jiang D. Y.;  Shan C. X.;  Zhang Z. Z.;  Yao B.;  Zhao D. X.;  Shen D. Z.
Adobe PDF(456Kb)  |  收藏  |  浏览/下载:460/102  |  提交时间:2012/10/21