Degenerate layer at ZnO/sapphire interface

	Degenerate layer at ZnO/sapphire interface
其他题名	论文其他题名
	Li L.; Shan C. X.; Wang S. P.; Li B. H.; Zhang J. Y.; Yao B.; Shen D. Z.; Fan X. W.; Lu Y. M.
	2009
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	42 期号:19
摘要	Zinc oxide (ZnO) films have been prepared on sapphire substrates by molecular beam epitaxy. It is found that the electron concentration of the films decreases, while the mobility increases with increasing the film thickness. Temperature-dependent Hall measurement reveals the existence of a degenerate layer at the ZnO/sapphire interface, which will increase the electron concentration and decrease the mobility in the ZnO film. By using a two-layer conduction model, the electron concentration and mobility of the film excluding the influence of the degenerate layer have been determined. A fitting to the corrected electron concentration of the ZnO film yields an activation energy of about 31 meV for the residual donors.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26219
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li L.,Shan C. X.,Wang S. P.,et al. Degenerate layer at ZnO/sapphire interface[J]. Journal of Physics D-Applied Physics,2009,42(19).
APA	Li L..,Shan C. X..,Wang S. P..,Li B. H..,Zhang J. Y..,...&Lu Y. M..(2009).Degenerate layer at ZnO/sapphire interface.Journal of Physics D-Applied Physics,42(19).
MLA	Li L.,et al."Degenerate layer at ZnO/sapphire interface".Journal of Physics D-Applied Physics 42.19(2009).

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