Ultraviolet photodiode based on p-Mg0.2Zn0.8O/n-ZnO heterojunction with wide response range

	Ultraviolet photodiode based on p-Mg0.2Zn0.8O/n-ZnO heterojunction with wide response range
其他题名	论文其他题名
	Li Y. F.; Yao B.; Deng R.; Li B. H.; Zhang J. Y.; Zhao Y. M.; Jiang D. Y.; Zhang Z. Z.; Shan C. X.; Shen D. Z.; Fan X. W.; Lu Y. M.
	2009
发表期刊	Journal of Physics D-Applied Physics
ISSN	0022-3727
卷号	42 期号:10
摘要	P-Mg0.2Zn0.8O/n-ZnO heterojunction ultraviolet photodiode was fabricated on a sapphire substrate by plasma-assisted molecular beam epitaxy. The current-voltage measurement indicates that the heterojunction has a weak rectifying behaviour with a turn-on voltage of similar to 5V. The spectral response measurement shows that the photodiode has a peak responsivity at around 340 nm, and it has a wide detection range in the ultraviolet region from 400 to 320 nm. The response in the long and short wavelength region is due to the contribution of the n-ZnO and p-MgZnO layers, respectively. The ultraviolet-visible rejection ratio (R340 nm/R500 nm) of two orders of magnitude was obtained at a reverse bias of 8V.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26288
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li Y. F.,Yao B.,Deng R.,et al. Ultraviolet photodiode based on p-Mg0.2Zn0.8O/n-ZnO heterojunction with wide response range[J]. Journal of Physics D-Applied Physics,2009,42(10).
APA	Li Y. F..,Yao B..,Deng R..,Li B. H..,Zhang J. Y..,...&Lu Y. M..(2009).Ultraviolet photodiode based on p-Mg0.2Zn0.8O/n-ZnO heterojunction with wide response range.Journal of Physics D-Applied Physics,42(10).
MLA	Li Y. F.,et al."Ultraviolet photodiode based on p-Mg0.2Zn0.8O/n-ZnO heterojunction with wide response range".Journal of Physics D-Applied Physics 42.10(2009).

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