Changchun Institute of Optics,Fine Mechanics and Physics,CAS
MgNiO-based metal-semiconductor-metal ultraviolet photodetector | |
其他题名 | 论文其他题名 |
Zhao Y. M.; Zhang J. Y.; Jiang D. Y.; Shan C. X.; Zhang Z. Z.; Yao B.; Zhao D. X.; Shen D. Z. | |
2009 | |
发表期刊 | Journal of Physics D-Applied Physics
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ISSN | 0022-3727 |
卷号 | 42期号:9 |
摘要 | In this study, we report the growth of Mg(x)Ni(1-x)O thin films on quartz substrates by electron beam evaporation. The absorption edge shows a blue shift from 340 nm to 260 nm with increase in the Mg content from 0.2 to 0.8. A metal-semiconductor-metal structured photodetector is fabricated from the Mg(0.2)Ni(0.8)O film. At a bias of 5V, the dark current of the photodetector is about 70 nA. The maximum responsivity is about 147.3 mu AW(-1) at 320 nm. In addition, the ultraviolet (UV) (320 nm) to visible (400 nm) rejection ratio is nearly two orders of magnitude. Based on these results, it is proposed that Mg(x)Ni(1-x)O is a potential candidate for application in UV photodetectors. |
收录类别 | SCI ; EI |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/26301 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Zhao Y. M.,Zhang J. Y.,Jiang D. Y.,et al. MgNiO-based metal-semiconductor-metal ultraviolet photodetector[J]. Journal of Physics D-Applied Physics,2009,42(9). |
APA | Zhao Y. M..,Zhang J. Y..,Jiang D. Y..,Shan C. X..,Zhang Z. Z..,...&Shen D. Z..(2009).MgNiO-based metal-semiconductor-metal ultraviolet photodetector.Journal of Physics D-Applied Physics,42(9). |
MLA | Zhao Y. M.,et al."MgNiO-based metal-semiconductor-metal ultraviolet photodetector".Journal of Physics D-Applied Physics 42.9(2009). |
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