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Growth and photoluminescence of vertically aligned ZnO nanowires/nanowalls
其他题名论文其他题名
Fang F.; Zhao D. X.; Li B. H.; Zhang Z. Z.; Zhang J. Y.; Shen D. Z.
2009
发表期刊Journal of Physics D-Applied Physics
ISSN0022-3727
卷号42期号:13
摘要By controlling the incoming gas flow, vertically aligned ZnO nanowires and nanowalls have been successfully synthesized on a Si (100) substrate by the simple physical vapour deposition method. The growth process of the ZnO nanowalls was observed by adjusting the growth time. The probable growth mechanisms of the ZnO nanowires and nanowalls were discussed in detail. In contrast to the photoluminescence results of nanowires, an enhancement of the LO phonon signal was observed in ZnO nanowalls, which was attributed to an additional channel of electron-phonon coupling induced by the residual strains in the ZnO nanowalls during the coalescence growth process.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26326
专题中科院长春光机所知识产出
推荐引用方式
GB/T 7714
Fang F.,Zhao D. X.,Li B. H.,et al. Growth and photoluminescence of vertically aligned ZnO nanowires/nanowalls[J]. Journal of Physics D-Applied Physics,2009,42(13).
APA Fang F.,Zhao D. X.,Li B. H.,Zhang Z. Z.,Zhang J. Y.,&Shen D. Z..(2009).Growth and photoluminescence of vertically aligned ZnO nanowires/nanowalls.Journal of Physics D-Applied Physics,42(13).
MLA Fang F.,et al."Growth and photoluminescence of vertically aligned ZnO nanowires/nanowalls".Journal of Physics D-Applied Physics 42.13(2009).
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