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Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2019, 卷号: 62, 期号: 6, 页码: 6
作者:  Kai, CuiHong;  Sun, XiaoJuan;  Jia, YuPing;  Shi, ZhiMing;  Jiang, Ke;  Ben, JianWei;  Wu, You;  Wang, Yong;  Liu, HeNan;  Li, XiaoHang;  Li, DaBing
收藏  |  浏览/下载：605/0  |  提交时间：2019/05/22
pit defects  surface potential  electron concentration  
Structural variations during aging of the particles synthesized by laser ablation of copper in water 期刊论文
Applied Physics a-Materials Science & Processing, 2019, 卷号: 125, 期号: 10, 页码: 10
作者:  K.Zhang;  R.A.Ganeev;  G.S.Boltaev;  C.L.Guo
浏览  |  Adobe PDF(4434Kb)  |  收藏  |  浏览/下载：145/53  |  提交时间：2020/08/24
optical-properties,oxide nanoparticles,zno nanoparticles,ag,au,metals,size,nanostructures,luminescence,nanourchins,Materials Science,Physics  
Effect of Ta addition on the microstructures and mechanical properties of in situ bi-phase (TiB2-TiCxNy)/(Ni-Ta) cermets 期刊论文
Ceramics International, 2019, 卷号: 45, 期号: 4, 页码: 4408-4417
作者:  H.Y.Yang;  Z.Wang;  S.L.Shu;  J.B.Lu
浏览  |  Adobe PDF(5361Kb)  |  收藏  |  浏览/下载：207/64  |  提交时间：2020/08/24
Cermets,Ta content,Mechanical properties,high-temperature synthesis,combustion synthesis,high-strength,ti-c,compression properties,tantalum content,composites,behavior,zr,(ticxny-tib2)/ni,Materials Science  
High-repetition-rate laser-induced damage of indium tin oxide films and polyimide films at a 1064 nm wavelength 期刊论文
Optical Materials Express, 2019, 卷号: 9, 期号: 2, 页码: 911-922
作者:  L.P.Peng;  Y.A.Zhao;  X.F.Liu;  Y.G.Liu;  Z.L.Cao;  M.P.Zhu
Adobe PDF(4001Kb)  |  收藏  |  浏览/下载：174/70  |  提交时间：2020/08/24
Materials Science,Optics  
Light Extraction Analysis of A1GaInP Based Red and GaN Based Blue/Green Flip-Chip Micro-LEDs Using the Monte Carlo Ray Tracing Method 期刊论文
Micromachines, 2019, 卷号: 10, 期号: 12, 页码: 13
作者:  S.Y.Lan;  H.Wan;  J.Zhao;  S.J.Zhou
Adobe PDF(4230Kb)  |  收藏  |  浏览/下载：281/95  |  提交时间：2020/08/24
micro-scale light emitting diode,light extraction efficiency,sapphire,substrate,encapsulation,emitting-diodes,high-power  
Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch 期刊论文
Scientific Reports, 2019, 卷号: 9, 期号: 9
作者:  H.P.Hu;  S.J.Zhou;  H.Wan;  X.T.Liu;  N.Li;  H.H.Xu
Adobe PDF(3195Kb)  |  收藏  |  浏览/下载：187/66  |  提交时间：2020/08/24
light-emitting-diodes,gan,efficiency,stress,aln,Science & Technology - Other Topics