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Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang;  Z.W.Li;  L.Min
浏览  |  Adobe PDF(1409Kb)  |  收藏  |  浏览/下载：193/56  |  提交时间：2020/08/24
Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Theoretical investigation of strain-engineered WSe2 monolayers as anode material for Li-ion batteries 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 370-375
作者:  J.Rehman;  R.Ali;  N.Ahmad;  X.D.Lv;  C.L.Guo
浏览  |  Adobe PDF(1616Kb)  |  收藏  |  浏览/下载：218/70  |  提交时间：2020/08/24
2D materials,LIBs,Adsorption,Diffusion,Tensile strain,transition-metal dichalcogenides,electrode materials,crystalline wse2,mono layers,lithium,energy,adsorption,chemistry,graphene,storage,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
作者:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
浏览  |  Adobe PDF(1456Kb)  |  收藏  |  浏览/下载：177/52  |  提交时间：2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry  
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
浏览  |  Adobe PDF(2881Kb)  |  收藏  |  浏览/下载：184/68  |  提交时间：2020/08/24
GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement