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Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation 期刊论文
Acs Applied Materials & Interfaces, 2022, 卷号: 14, 期号: 33, 页码: 37947-37957
作者:  Y. Chen;  H. Zang;  S. L. Zhang;  Z. M. Shi;  J. W. Ben;  K. Jiang;  Y. P. Jia;  M. R. Liu;  D. B. Li and X. J. Sun
浏览  |  Adobe PDF(9063Kb)  |  收藏  |  浏览/下载：110/37  |  提交时间：2023/06/14
Vivid Structural Color Macropatterns Created by Flexible Nanopainting of Ultrafast Lasers 期刊论文
Acs Applied Materials & Interfaces, 2022, 卷号: 14, 期号: 18, 页码: 21758-21767
作者:  Y. H. Li;  X. Y. Zhang;  T. T. Zou;  Q. Q. Mu and J. J. Yang
浏览  |  Adobe PDF(9926Kb)  |  收藏  |  浏览/下载：98/38  |  提交时间：2023/06/14
Accurate Adjusting the Lattice Strain of Triple-Cation and Mixed-Halide Perovskites for High-Performance Photodetector 期刊论文
Acs Applied Materials & Interfaces, 2022, 卷号: 14, 期号: 24, 页码: 28154-28162
作者:  W. C. Kong;  C. Zhao;  T. Huang;  X. Y. Li;  J. Xing;  Z. Yu;  P. Yang;  W. Li and W. L. Yu
浏览  |  Adobe PDF(4761Kb)  |  收藏  |  浏览/下载：143/54  |  提交时间：2023/06/14
Bication-Mediated Quasi-2D Halide Perovskites for High-Performance Flexible Photodetectors: From Ruddlesden-Popper Type to Dion-Jacobson Type 期刊论文
Acs Applied Materials & Interfaces, 2020, 卷号: 12, 期号: 35, 页码: 39567-39577
作者:  Z. X. Lai, R. T. Dong, Q. Zhu, Y. Meng, F. Wang, F. Z. Li, X. M. Bu, X. L. Kang, H. Zhang, Q. Quan, W. Wang, F. Wang, S. Yip and J. C. Ho
浏览  |  Adobe PDF(6466Kb)  |  收藏  |  浏览/下载：147/35  |  提交时间：2021/07/06
Boosting the Efficiency and Stability of Perovskite Light-Emitting Devices by a 3-Amino-1-propanol-Tailored PEDOT:PSS Hole Transport Layer 期刊论文
Acs Applied Materials & Interfaces, 2020, 卷号: 12, 期号: 38, 页码: 43331-43338
作者:  R. T. Fan, L. Song, Y. S. Hu, X. Y. Guo, X. Y. Liu, L. S. Wang, C. Geng, S. Xu, Y. H. Zhang, Z. H. Zhang, N. N. Luan and W. G. Bi
浏览  |  Adobe PDF(4342Kb)  |  收藏  |  浏览/下载：129/26  |  提交时间：2021/07/06
Modulation of Field-Effect Passivation at the Back Electrode Interface Enabling Efficient Kesterite-Type Cu2ZnSn(S,Se)(4) Thin-Film Solar Cells 期刊论文
Acs Applied Materials & Interfaces, 2020, 卷号: 12, 期号: 34, 页码: 38163-38174
作者:  Y. P. Song,H. H. Sun,B. Yao,Y. F. Li,Z. H. Ding,W. Qin,Z. Z. Zhang,L. G. Zhang,H. F. Zhao and D. C. Pan
浏览  |  Adobe PDF(5073Kb)  |  收藏  |  浏览/下载：176/48  |  提交时间：2021/07/06
Improved Performance for Thermally Evaporated Perovskite Light-Emitting Devices via Defect Passivation and Carrier Regulation 期刊论文
Acs Applied Materials & Interfaces, 2020, 卷号: 12, 期号: 13, 页码: 15928-15933
作者:  K. F. Jia,L. Song,Y. S. Hu,X. Y. Guo,X. Y. Liu,C. Geng,S. Xu,R. T. Fan,L. X. Huang,N. N. Luan and W. G. Bi
浏览  |  Adobe PDF(2585Kb)  |  收藏  |  浏览/下载：173/40  |  提交时间：2021/07/06
Highly Efficient Microcavity Organic Light-Emitting Devices with Narrow-Band Pure UV Emission 期刊论文
Acs Applied Materials & Interfaces, 2020, 卷号: 12, 期号: 9, 页码: 10717-10726
作者:  J. Lin,X. Y. Guo,Y. Lv,X. Y. Liu and Y. Wang
浏览  |  Adobe PDF(4063Kb)  |  收藏  |  浏览/下载：136/45  |  提交时间：2021/07/06
Solid-State Fluorescent Carbon Dots with Aggregation-Induced Yellow Emission for White Light-Emitting Diodes with High Luminous Efficiencies 期刊论文
Acs Applied Materials & Interfaces, 2019, 卷号: 11, 期号: 27, 页码: 24395-24403
作者:  Y.Q.Zhang;  P.Zhuo;  H.Yin;  Y.Fan;  J.H.Zhang;  X.Y.Liu;  Z.Q.Chen
浏览  |  Adobe PDF(3937Kb)  |  收藏  |  浏览/下载：296/73  |  提交时间：2020/08/24
carbon dots (CDs),aggregation-caused quenching (ACQ),aggregation-induced emission (AIE),solid-state fluorescence,white,light-emitting diodes (WLEDs),luminous efficiency,graphene quantum dots,nitrogen-doped carbon,green route,photoluminescence,nanodots,oxide,luminescence,mechanism,sulfur,Science & Technology - Other Topics,Materials Science  
Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)(4) Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface 期刊论文
Acs Applied Materials & Interfaces, 2019, 卷号: 11, 期号: 35, 页码: 31851-31859
作者:  Y.P.Song;  B.Yao;  Y.F.Li;  Z.H.Ding;  H.H.Sun;  Z.Z.Zhang
浏览  |  Adobe PDF(2313Kb)  |  收藏  |  浏览/下载：217/50  |  提交时间：2020/08/24
Cu2ZnSn(S,Se)(4),solar cells,back surface field,p-MoSe2:Nb,carrier,recombination,shunt resistance,series resistance,recombination,resistance,monolayer,contact,mos2,bsf,Science & Technology - Other Topics,Materials Science