Modulation of Field-Effect Passivation at the Back Electrode Interface Enabling Efficient Kesterite-Type Cu2ZnSn(S,Se)(4) Thin-Film Solar Cells

doi:10.1021/acsami.0c10561

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	Modulation of Field-Effect Passivation at the Back Electrode Interface Enabling Efficient Kesterite-Type Cu2ZnSn(S,Se)(4) Thin-Film Solar Cells
	Y. P. Song,H. H. Sun,B. Yao,Y. F. Li,Z. H. Ding,W. Qin,Z. Z. Zhang,L. G. Zhang,H. F. Zhao and D. C. Pan
	2020
Source Publication	Acs Applied Materials & Interfaces
ISSN	1944-8244
Volume	12 Issue:34 Pages:38163-38174
Abstract	For further efficiency improvement in kesterite-type Cu2ZnSn-(S,Se)(4) (CZTSSe) solar cells, it is essential to address the carrier recombination issue at the back electrode interface (BEI) caused by the undesirable built-in potential orientation toward an absorber as an n-MoSe2 interfacial layer formed. In this regard, back surface field (BSF) incorporation, i.e., field-effect passivation, shows promise for dealing with this issue due to its positive effect in decreasing recombination at the BEI. In this study, the BSF was realized with the p-type conduction transition in interfacial layer MoSe2 by incorporating Nb into the back electrode. The BSF width can be tuned via modulating the carrier concentration of the absorber, which has been demonstrated by capacitance-voltage characterization. A beyond 7% efficiency BSF-applied CZTSSe solar cell is prepared, and the effects of a tunable BSF and the mechanism underpinning device performance improvement have been investigated in detail. The wider BSF distribution in the absorber induces a decrease in reverse saturation current density (J(0)) due to the stronger BSF effect in suppressing BEI recombination. As a result, an accompanying increase in open-circuit voltage (V-OC) and short-circuit current density (J(SC)) is achieved as compared to the BSF-free case. This study offers an alternative strategy to address the BEI recombination issue and also broadens the interface passivation research scope of potentially competitive kesterite solar cells.
DOI	10.1021/acsami.0c10561
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Indexed By	SCI ; EI
Language	英语
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Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/64700
Collection	中国科学院长春光学精密机械与物理研究所
Recommended Citation GB/T 7714	Y. P. Song,H. H. Sun,B. Yao,Y. F. Li,Z. H. Ding,W. Qin,Z. Z. Zhang,L. G. Zhang,H. F. Zhao and D. C. Pan. Modulation of Field-Effect Passivation at the Back Electrode Interface Enabling Efficient Kesterite-Type Cu2ZnSn(S,Se)(4) Thin-Film Solar Cells[J]. Acs Applied Materials & Interfaces,2020,12(34):38163-38174.
APA	Y. P. Song,H. H. Sun,B. Yao,Y. F. Li,Z. H. Ding,W. Qin,Z. Z. Zhang,L. G. Zhang,H. F. Zhao and D. C. Pan.(2020).Modulation of Field-Effect Passivation at the Back Electrode Interface Enabling Efficient Kesterite-Type Cu2ZnSn(S,Se)(4) Thin-Film Solar Cells.Acs Applied Materials & Interfaces,12(34),38163-38174.
MLA	Y. P. Song,H. H. Sun,B. Yao,Y. F. Li,Z. H. Ding,W. Qin,Z. Z. Zhang,L. G. Zhang,H. F. Zhao and D. C. Pan."Modulation of Field-Effect Passivation at the Back Electrode Interface Enabling Efficient Kesterite-Type Cu2ZnSn(S,Se)(4) Thin-Film Solar Cells".Acs Applied Materials & Interfaces 12.34(2020):38163-38174.

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中国科学院长春光学精密机械与物理研究所