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Photoelectric Properties of N Doped MgZnO Thin Films 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 8, 页码: 956-960
作者:  P.-C.Zhao;  Z.-Z.Zhang;  B.Yao;  B.-H.Li;  X.-L.Li
caj(1183Kb)  |  收藏  |  浏览/下载：156/49  |  提交时间：2020/08/24
Thin films,Carrier mobility,II-VI semiconductors,Light emission,Magnesium,Molecular beam epitaxy,Molecular beams,Nitrogen,Photoelectricity,Sapphire,Semiconductor alloys,Semiconductor doping,Zinc oxide  
High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang
浏览  |  Adobe PDF(971Kb)  |  收藏  |  浏览/下载：131/46  |  提交时间：2020/08/24
Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors  
Passivation Mechanism of Nitrogen in ZnO under Different Oxygen Ambience 期刊论文
Crystals, 2019, 卷号: 9, 期号: 4, 页码: 7
作者:  X.Y.Chen;  Z.Z.Zhang;  Y.Y.Zhang;  B.Yao;  B.H.Li;  Q.Gong
浏览  |  Adobe PDF(1213Kb)  |  收藏  |  浏览/下载：129/65  |  提交时间：2020/08/24
molecular beam epitaxy,ZnO,dopant,defects,x-ray photoelectron,optical-properties,thin-films  
Polarization-controlled and single-transverse-mode vertical-cavity surface-emitting lasers with eye-shaped oxide aperture 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 12, 页码: 4
作者:  Zhang, Jiye;  Zhang, Jianwei;  Zhang, Xing;  Ning, Yongqiang;  Zhu, Hongbo;  Hofmann, Werner;  Zhang, Jun;  Zeng, Yugang;  Huang, Youwen;  Xiang, Lei;  Liu, Yingying;  Qin, Li;  Wang, Lijun
Adobe PDF(798Kb)  |  收藏  |  浏览/下载：559/96  |  提交时间：2019/08/26
molecular-beam epitaxy  oxidation  growth  Physics  
Hot carriers induced quenching of defects luminescence in Si doped AlN with Al core 期刊论文
Journal of Luminescence, 2018, 卷号: 198, 页码: 178-182
作者:  Xie, X. H.;  Li, B. H.;  Zhang, Z. Z.;  Shen, D. Z.
Adobe PDF(628Kb)  |  收藏  |  浏览/下载：241/92  |  提交时间：2019/09/17
molecular-beam epitaxy  plasmon  Optics  
Reinventing a p-type doping process for stable ZnO light emitting devices 期刊论文
Journal of Physics D-Applied Physics, 2018, 卷号: 51, 期号: 22, 页码: 4
作者:  Xie, X. H.;  Li, B. H.;  Zhang, Z. Z.;  Shen, D. Z.
Adobe PDF(1069Kb)  |  收藏  |  浏览/下载：285/95  |  提交时间：2019/09/17
zinc oxide  p-type  self-compens-tion  doping  molecular-beam epitaxy  thin-films  room-temperature  mgzno films  diodes  nanoparticles  modulation  gan(0001)  inversion  epilayers  Physics