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Microfluidics-based quantum dot color conversion layers for full-color micro-LED display 期刊论文
Applied Physics Letters, 2021, 卷号: 118, 期号: 17
Authors:  Y. Li;  T. J;  W. Q;  Z. Y;  S. Y;  L. P;  L. J;  Q. Y;  W. W;  Z. Q and L. J
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Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16
Authors:  K. Jiang;  X. Sun;  Y. Chen;  S. Zhang;  J. Ben;  Y. Chen;  Z.-H. Zhang;  Y. Jia;  Z. Shi and D. Li
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Super-broadband geometric phase devices based on circular polarization converter with mirror symmetry 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 10
Authors:  W. Chen;  Y. Yu;  Q. Mu;  J. Campos;  Q. Wang;  S. Li;  S. Zhang and L. Xuan
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Performance enhancement of a self-powered solar-blind UV photodetector based on ZnGa2O4/Si heterojunction via interface pyroelectric effect 期刊论文
Applied Physics Letters, 2021, 卷号: 118, 期号: 25
Authors:  D. Han;  K. Liu;  X. Chen;  B. Li;  T. Zhai;  L. Liu and D. Shen
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Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 mu m 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 14, 页码: 4
Authors:  X. Li,H. Wang,Z. L. Qiao,J. X. B. Sia,W. J. Wang,X. Guo,Y. Zhang,Z. C. Niu,C. Z. Tong and C. Y. Liu
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
Authors:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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Ultrabroadband and independent polarization of optical amplification with InGaAs-based indium-rich cluster quantum-confined structure 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 5
Authors:  M. Zheng;  Q. N. Yu;  X. Li;  H. X. Tai;  X. Zhang;  J. W. Zhang;  Y. Q. Ning and J. Wu
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High performance planar microcavity organic semiconductor lasers based on thermally evaporated top distributed Bragg reflector 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 15, 页码: 5
Authors:  Y. S. Hu,F. Bencheikh,S. Chenais,S. Forget,X. Y. Liu and C. Adachi
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The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
Authors:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
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Defects controlled doping and electrical transport in TiS2 single crystals 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 12, 页码: 5
Authors:  K. Chen,M. Song,Y. Y. Sun,H. Xu,D. C. Qi,Z. H. Su,X. Y. Gao,Q. Xu,J. Hu,J. F. Zhu,R. R. Zhang,J. Wang,L. Zhang,L. Cao,Y. Y. Han and Y. M. Xiong
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