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Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
浏览  |  Adobe PDF(2230Kb)  |  收藏  |  浏览/下载：142/59  |  提交时间：2021/07/06
Giant enhancement of ultraviolet near-band-edge emission from a wide-bandgap oxide with dipole-forbidden bandgap transition 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 705
作者:  Zhou, H.;  R. Deng;  Y. F. Li;  B. Yao;  J. M. Qin;  J. Song;  Y. Q. Li;  Z. H. Ding and L. Liu
浏览  |  Adobe PDF(1302Kb)  |  收藏  |  浏览/下载：308/92  |  提交时间：2018/06/13
Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method 期刊论文
Journal of Alloys and Compounds, 2011, 卷号: 509, 期号: 24, 页码: 6751-6755
作者:  Liu X.;  Song H.;  Miao G. Q.;  Jiang H.;  Cao L. Z.;  Li D. B.;  Sun X. J.;  Chen Y. R.;  Li Z. M.
Adobe PDF(849Kb)  |  收藏  |  浏览/下载：546/132  |  提交时间：2012/10/21
Intense visible fluorescence and energy transfer in Dy3+, Tb3+, Sm3+ and Eu3+ doped rare-earth borate glasses 期刊论文
Journal of Alloys and Compounds, 2005, 卷号: 390, 期号: 1—2, 页码: 197-201
作者:  Lin H.;  Pun E. Y. B.;  Wang X. J.;  Liu X. R.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：922/197  |  提交时间：2012/10/21