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Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16
作者:  K. Jiang;  X. Sun;  Y. Chen;  S. Zhang;  J. Ben;  Y. Chen;  Z.-H. Zhang;  Y. Jia;  Z. Shi and D. Li
浏览  |  Adobe PDF(2688Kb)  |  收藏  |  浏览/下载:101/36  |  提交时间:2022/06/13
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
Adobe PDF(2009Kb)  |  收藏  |  浏览/下载:136/45  |  提交时间:2021/07/06
High-efficiency generation of Bessel beams with transmissive metasurfaces 期刊论文
Applied Physics Letters, 2018, 卷号: 112, 期号: 19, 页码: 5
作者:  Wang, Z.;  Dong, S. H.;  Luo, W. J.;  Jia, M.;  Liang, Z. Z.;  He, Q.;  Sun, S. L.;  Zhou, L.
Adobe PDF(3357Kb)  |  收藏  |  浏览/下载:315/121  |  提交时间:2019/09/17
diffraction-free beams  meta-surfaces  reflection  Physics  
Thermal analysis of high-bandwidth and energy-efficient 980 nm VCSELs with optimized quantum well gain peak-to-cavity resonance wevelength offset 期刊论文
Applied Physics Letters, 2017, 卷号: 111, 期号: 24
作者:  Li, H.;  P. Wolf;  X. W. Jia;  J. A. Lott and D. Bimberg
Adobe PDF(801Kb)  |  收藏  |  浏览/下载:227/66  |  提交时间:2018/06/13
Formation of stable and reproducible low resistivity and high carrier concentration p-type ZnO doped at high pressure with Sb 期刊论文
Applied Physics Letters, 2009, 卷号: 95, 期号: 2
作者:  Qin J. M.;  Yao B.;  Yan Y.;  Zhang J. Y.;  Jia X. P.;  Zhang Z. Z.;  Li B. H.;  Shan C. X.;  Shen D. Z.
Adobe PDF(430Kb)  |  收藏  |  浏览/下载:525/99  |  提交时间:2012/10/21