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Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser 期刊论文
Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 5
作者:  Li Xiang;  Wang Hong;  Qiao Zhongliang;  Zhang Yu;  Xu Yingqiang;  Niu Zhichuan;  Tong Cunzhu;  Liu Chongyang
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Gallium compounds  Antimony compounds  III-V semiconductors  Indium antimonides  Quantum well lasers  Semiconductor lasers  Semiconductor quantum wells  
Investigation of regime switching from mode locking to Q-switching in a 2 um InGaSb GaAsSb quantum well laser 期刊论文
Optics Express, 2018, 卷号: 26, 期号: 7, 页码: 8289-8295
作者:  Li, X.;  Wang, H.;  Qiao, Z. L.;  Guo, X.;  Wang, W. J.;  Ng, G. I.;  Zhang, Y.;  Xu, Y. Q.;  Niu, Z. C.;  Tong, C. Z.;  Liu, C. Y.
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saturable absorber  dot lasers  femtosecond  sesams  Optics  
Near-diffraction-limited Bragg reflection waveguide lasers 期刊论文
Applied Optics, 2018, 卷号: 57, 期号: 34, 页码: F15-F21
作者:  Wang, L. J.;  Li, Z.;  Tong, C. Z.;  Shu, S. L.;  Tian, S. C.;  Zhang, J.;  Zhang, X.;  Wang, L. J.
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brightness  nm  diodes  Optics  
High-power GaSb-based microstripe broad-area lasers 期刊论文
Applied Physics Express, 2018, 卷号: 11, 期号: 3, 页码: 4
作者:  Lu, Z. F.;  Wang, L. J.;  Zhang, Y.;  Shu, S. L.;  Tian, S. C.;  Tong, C. Z.;  Hou, G. Y.;  Chai, X. L.;  Xu, Y. Q.;  Ni, H. Q.;  Niu, Z. C.;  Wang, L. J.
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low-beam divergence  mu-m  semiconductor-lasers  diode-lasers  wave-guide  field  Physics  
Transparency Engineering in Quantum Dot-Based Memories 期刊论文
Physica Status Solidi a-Applications and Materials Science, 2018, 卷号: 215, 期号: 13, 页码: 7
作者:  Arikan, I. F.;  Cottet, N.;  Nowozin, T.;  Bimberg, D.
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band engineering  memory  quantum dots  resonant tunnel  resonant-tunneling current  dependence  Materials Science  Physics  
2μm InGaSb/AlGaAsSb量子阱激光器理想因子的研究 期刊论文
红外与激光工程, 2018, 期号: 05, 页码: 10-14
作者:  李翔;  汪宏;  乔忠良;  张宇;  徐应强;  牛智川;  佟存柱;  刘重阳
收藏  |  浏览/下载:247/0  |  提交时间:2019/09/17
半导体激光器  理想因子n  单量子阱  
MOVPE-Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications 期刊论文
Physica Status Solidi B-Basic Solid State Physics, 2018, 卷号: 255, 期号: 12, 页码: 7
作者:  Sala, E. M.;  Arikan, I. F.;  Bonato, L.;  Bertram, F.;  Veit, P.;  Christen, J.;  Strittmatter, A.;  Bimberg, D.
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AlP barrier  GaP  InGaSb  MOVPE growth  nanoscale memory  quantum dots  hole localization  ohmic contacts  luminescence  resistance  Physics