High-power GaSb-based microstripe broad-area lasers

doi:10.7567/apex.11.032702

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	High-power GaSb-based microstripe broad-area lasers
	Lu, Z. F.; Wang, L. J.; Zhang, Y.; Shu, S. L.; Tian, S. C.; Tong, C. Z.; Hou, G. Y.; Chai, X. L.; Xu, Y. Q.; Ni, H. Q.; Niu, Z. C.; Wang, L. J.
	2018
发表期刊	Applied Physics Express
ISSN	1882-0778
卷号	11 期号:3 页码:4
摘要	A simple and effective approach based on the microstripe broad-area (MSBA) structure was proposed, and high-efficiency and high-power mid-infrared GaSb-based quantum well lasers were demonstrated. It was shown that the MSBA structure can effectively suppress the lateral current leakage and improve the temperature behavior of GaSb lasers. Compared with the conventional broad-area structure, the energy conversion efficiency of MSBA lasers was more than threefold and threshold current density decreased above 50%. High characteristic temperature and high beam quality were realized. (C) 2018 The Japan Society of Applied Physics
关键词	low-beam divergence mu-m semiconductor-lasers diode-lasers wave-guide field Physics
DOI	10.7567/apex.11.032702
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/61021
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Lu, Z. F.,Wang, L. J.,Zhang, Y.,et al. High-power GaSb-based microstripe broad-area lasers[J]. Applied Physics Express,2018,11(3):4.
APA	Lu, Z. F..,Wang, L. J..,Zhang, Y..,Shu, S. L..,Tian, S. C..,...&Wang, L. J..(2018).High-power GaSb-based microstripe broad-area lasers.Applied Physics Express,11(3),4.
MLA	Lu, Z. F.,et al."High-power GaSb-based microstripe broad-area lasers".Applied Physics Express 11.3(2018):4.

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