MOVPE-Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications

doi:10.1002/pssb.201800182

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	MOVPE-Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications
	Sala, E. M.; Arikan, I. F.; Bonato, L.; Bertram, F.; Veit, P.; Christen, J.; Strittmatter, A.; Bimberg, D.
	2018
发表期刊	Physica Status Solidi B-Basic Solid State Physics
ISSN	0370-1972
卷号	255 期号:12 页码:7
摘要	The structural and optical properties of InGaSb/GaP(001) type-II quantum dots (QDs) grown by metalorganic vapor phase epitaxy (MOVPE) are studied. Growth strategies as growth interruption (GRI) after deposition of InGaSb and Sb-flush prior to QD growth are used to tune the structural and optical properties of InGaSb QDs. The Sb-flush affects the surface diffusion leading to more homogeneous QDs and to a reduction of defects. A ripening process during GRI occurs, where QD size is increased and QD-luminescence remarkably improved. InGaSb QDs are embedded in GaP n + p-diodes, employing an additional AlP barrier, and characterized electrically. A localization energy of 1.15 eV for holes in QDs is measured by using deep-level transient spectroscopy (DLTS). The use of Sb in QD growth is found to decrease the associated QD capture cross-section by one order of magnitude with respect to the one of In0.5Ga0.5As/GaP QDs. This leads to a hole storage time of almost 1 h at room temperature, which represents to date the record value for MOVPE-grown QDs, making MOVPE of InGaSb/GaP related QDs a promising technology for QD-based nano-memories.
关键词	AlP barrier GaP InGaSb MOVPE growth nanoscale memory quantum dots hole localization ohmic contacts luminescence resistance Physics
DOI	10.1002/pssb.201800182
收录类别	SCI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60728
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Sala, E. M.,Arikan, I. F.,Bonato, L.,et al. MOVPE-Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications[J]. Physica Status Solidi B-Basic Solid State Physics,2018,255(12):7.
APA	Sala, E. M..,Arikan, I. F..,Bonato, L..,Bertram, F..,Veit, P..,...&Bimberg, D..(2018).MOVPE-Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications.Physica Status Solidi B-Basic Solid State Physics,255(12),7.
MLA	Sala, E. M.,et al."MOVPE-Growth of InGaSb/AlP/GaP(001) Quantum Dots for Nanoscale Memory Applications".Physica Status Solidi B-Basic Solid State Physics 255.12(2018):7.

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