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Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
Adobe PDF(2069Kb)  |  收藏  |  浏览/下载：184/36  |  提交时间：2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide  
Synthesis and Luminescence Properties of Zn2GeO4 Nanorods 期刊论文
Chinese Journal of Inorganic Chemistry, 2017, 卷号: 33, 期号: 10
作者:  Yang, Y.;  Y. Cong;  Z. M. Zhu;  C. Guo;  Z. Zhang;  Z. W. Wang and J. H. Zhang
浏览  |  Adobe PDF(1345Kb)  |  收藏  |  浏览/下载：377/117  |  提交时间：2018/06/13
Tunable two-dimensional photonic crystal cavity all-optical switching infiltrated with liquid-crystal 期刊论文
Acta Physica Sinica, 2013, 卷号: 62, 期号: 13
作者:  Zhou J. W.;  Liang J. Q.;  Liang Z. Z.;  Tian C.;  Qin Y. X.;  Wang W. B.
Adobe PDF(1945Kb)  |  收藏  |  浏览/下载：468/138  |  提交时间：2014/05/14
Defects and Microstructures in the Surface Layer of Single-crystal Silicon Induced by High-current Pulsed Electron Beam 期刊论文
Journal of Inorganic Materials, 2010, 卷号: 25, 期号: 12, 页码: 1313-1317
作者:  Wang X. T.;  Guan Q. F.;  Gu Q. Q.;  Peng D. J.;  Li Y.;  Chen B.
Adobe PDF(772Kb)  |  收藏  |  浏览/下载：553/183  |  提交时间：2012/10/21
The influence of proton irradiation on the microstructure of pure AI films 期刊论文
Acta Physica Sinica, 2008, 卷号: 57, 期号: 3, 页码: 1829-1833
作者:  Fan X. H.;  Chen B.;  Guan Q. F.
Adobe PDF(247Kb)  |  收藏  |  浏览/下载：424/79  |  提交时间：2012/10/21
Stacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam 期刊论文
Acta Physica Sinica, 2008, 卷号: 57, 期号: 1, 页码: 392-397
作者:  QingFeng G.;  Bo C.;  QingYu Z.;  Chuang D.;  GuangTian Z.
Adobe PDF(248Kb)  |  收藏  |  浏览/下载：416/142  |  提交时间：2012/10/21