Stacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam

	Stacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam
其他题名	论文其他题名
	QingFeng G.; Bo C.; QingYu Z.; Chuang D.; GuangTian Z.
	2008
发表期刊	Acta Physica Sinica
ISSN	1000-3290
卷号	57 期号:1 页码:392-397
摘要	The specimens of single-crystal aluminum were irradiated with high cur-rent pulsed electron beam (HCPEB). The vacancy cluster defect microstructure has been investigated by using transmission electron microscopy (TEM). The results show that three types of vacancy clusters including dislocation loop, void and even stacking fault tetrahedron (SFT), which are not normally formed in metals with high SFT formation energy, can be formed in single-crystal aluminum specimens irradiated with HCPEB. The nucleation process of three types of vacancy clusters do not appear at the same time. There is a close relationship between the three types of vacancy clusters. Based on the experimental results, a possible mechanism of SFT formation and evolution was presented.
收录类别	SCI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25678
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	QingFeng G.,Bo C.,QingYu Z.,et al. Stacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam[J]. Acta Physica Sinica,2008,57(1):392-397.
APA	QingFeng G.,Bo C.,QingYu Z.,Chuang D.,&GuangTian Z..(2008).Stacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam.Acta Physica Sinica,57(1),392-397.
MLA	QingFeng G.,et al."Stacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam".Acta Physica Sinica 57.1(2008):392-397.

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