Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Stacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam | |
其他题名 | 论文其他题名 |
QingFeng G.; Bo C.; QingYu Z.; Chuang D.; GuangTian Z. | |
2008 | |
发表期刊 | Acta Physica Sinica |
ISSN | 1000-3290 |
卷号 | 57期号:1页码:392-397 |
摘要 | The specimens of single-crystal aluminum were irradiated with high cur-rent pulsed electron beam (HCPEB). The vacancy cluster defect microstructure has been investigated by using transmission electron microscopy (TEM). The results show that three types of vacancy clusters including dislocation loop, void and even stacking fault tetrahedron (SFT), which are not normally formed in metals with high SFT formation energy, can be formed in single-crystal aluminum specimens irradiated with HCPEB. The nucleation process of three types of vacancy clusters do not appear at the same time. There is a close relationship between the three types of vacancy clusters. Based on the experimental results, a possible mechanism of SFT formation and evolution was presented. |
收录类别 | SCI |
语种 | 中文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/25678 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | QingFeng G.,Bo C.,QingYu Z.,et al. Stacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam[J]. Acta Physica Sinica,2008,57(1):392-397. |
APA | QingFeng G.,Bo C.,QingYu Z.,Chuang D.,&GuangTian Z..(2008).Stacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam.Acta Physica Sinica,57(1),392-397. |
MLA | QingFeng G.,et al."Stacking fault tetrahedra in single-crystal aluminum induced by high-current pulsed electron beam".Acta Physica Sinica 57.1(2008):392-397. |
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