Defects and Microstructures in the Surface Layer of Single-crystal Silicon Induced by High-current Pulsed Electron Beam

	Defects and Microstructures in the Surface Layer of Single-crystal Silicon Induced by High-current Pulsed Electron Beam
其他题名	论文其他题名
	Wang X. T.; Guan Q. F.; Gu Q. Q.; Peng D. J.; Li Y.; Chen B.
	2010
发表期刊	Journal of Inorganic Materials
ISSN	1000-324X
卷号	25 期号:12 页码:1313-1317
摘要	In order to investigate the microstructures of nonmetallic material induced by high-speed deformation, the high-current pulsed electron beam (HCPEB) technique was used to irradiate the single-crystal silicon. The surface microstructures induced by electron beam were studied by transmission electron microscope (TEM). The experimental results showed that a large number of defect structures were formed by the HCPEB irradiation. Among them, the typical defect structures were the parallel screw dislocations and the extrinsic stacking faults. In the meantime, the HCPEB irradiation induced high density of vacancy cluster defects. The surface stress with very high value and strain rate led to the integral shift of (111) crystal plane, which might be the dominating reason of the formation of the massive vacancy cluster defects. In addition, the mixtures of nanocrystal and amorphous in the surface of single-crystal silicon can be formed by HCPEB technique.
收录类别	SCI
语种	中文
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24743
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X. T.,Guan Q. F.,Gu Q. Q.,et al. Defects and Microstructures in the Surface Layer of Single-crystal Silicon Induced by High-current Pulsed Electron Beam[J]. Journal of Inorganic Materials,2010,25(12):1313-1317.
APA	Wang X. T.,Guan Q. F.,Gu Q. Q.,Peng D. J.,Li Y.,&Chen B..(2010).Defects and Microstructures in the Surface Layer of Single-crystal Silicon Induced by High-current Pulsed Electron Beam.Journal of Inorganic Materials,25(12),1313-1317.
MLA	Wang X. T.,et al."Defects and Microstructures in the Surface Layer of Single-crystal Silicon Induced by High-current Pulsed Electron Beam".Journal of Inorganic Materials 25.12(2010):1313-1317.

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