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Optical coherent injection of carrier and current in twisted bilayer graphene 期刊论文
Physical Review B, 2022, 卷号: 105, 期号: 8, 页码: 9
作者:  Z. Zheng;  Y. Song;  Y. W. Shan;  W. Xin and J. L. Cheng
浏览  |  Adobe PDF(1133Kb)  |  收藏  |  浏览/下载：92/41  |  提交时间：2023/06/14
Annihilation mechanism of excitons in a MoS2 monolayer through direct Forster-type energy transfer and multistep diffusion 期刊论文
Physical Review B, 2020, 卷号: 101, 期号: 19, 页码: 9
作者:  K. J. Lee, W. Xin and C. L. Guo
浏览  |  Adobe PDF(1421Kb)  |  收藏  |  浏览/下载：117/36  |  提交时间：2021/07/06
Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 19, 页码: 19
作者:  P.Steindl;  E.M.Sala;  B.Alen;  D.F.Marron;  D.Bimberg
浏览  |  Adobe PDF(4756Kb)  |  收藏  |  浏览/下载：164/60  |  提交时间：2020/08/24
single-photon source,temperature-dependence,excitonic recombination,raman-spectra,oxygen donor,gaas,emission,luminescence,photoluminescence,localization,Materials Science,Physics  
Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 11, 页码: 14
作者:  P.Klenovsky;  A.Schliwa;  D.Bimberg
浏览  |  Adobe PDF(1784Kb)  |  收藏  |  浏览/下载：173/60  |  提交时间：2020/08/24
cyclotron-resonance,strain distribution,optical-properties,semiconductors,energy,gap,heterostructures  
Third harmonic generation of undoped graphene in Hartree-Fock approximation 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 24, 页码: 8
作者:  J.L.Cheng;  J.E.Sipe;  C.L.Guo
浏览  |  Adobe PDF(604Kb)  |  收藏  |  浏览/下载：119/57  |  提交时间：2020/08/24
Materials Science,Physics  
Nonlinear magneto-optic effects in doped graphene and in gapped graphene A perturbative treatment 期刊论文
Physical Review B, 2018, 卷号: 97, 期号: 12, 页码: 17
作者:  Cheng, J. L.;  Guo, C.
浏览  |  Adobe PDF(951Kb)  |  收藏  |  浏览/下载：227/57  |  提交时间：2019/09/17
semiconductors  plasmonics  photonics  Materials Science  Physics  
Plasmon-induced hot carrier transfer to the surface of three-dimensional topological insulators 期刊论文
Physical Review B, 2018, 卷号: 98, 期号: 7, 页码: 7
作者:  Paudel, H. P.;  Apalkov, V.;  Sun, X. J.;  Stockman, M. I.
浏览  |  Adobe PDF(737Kb)  |  收藏  |  浏览/下载：260/103  |  提交时间：2019/09/17
electrical detection  spin polarization  charge-current  transport  regime  Materials Science  Physics  
Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus 期刊论文
Physical Review B, 2017, 卷号: 96, 期号: 15
作者:  Wang, D.;  D. Han;  X. B. Li;  N. K. Chen;  D. West;  V. Meunier;  S. B. Zhang and H. B. Sun
浏览  |  Adobe PDF(1327Kb)  |  收藏  |  浏览/下载：311/88  |  提交时间：2018/06/13