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The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation 期刊论文
Advanced Electronic Materials, 2022, 卷号: 8, 期号: 1, 页码: 11
作者:  Y. Chen;  Z. M. Shi;  S. L. Zhang;  J. W. Ben;  K. Jiang;  H. Zang;  Y. P. Jia;  W. Lu;  D. B. Li and X. J. Sun
浏览  |  Adobe PDF(1673Kb)  |  收藏  |  浏览/下载：145/45  |  提交时间：2022/06/13
Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition 期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10
作者:  L.Wang;  L.Chen;  S.L.Wong;  X.Huang;  W.G.Liao;  C.X.Zhu
浏览  |  Adobe PDF(1549Kb)  |  收藏  |  浏览/下载：202/63  |  提交时间：2020/08/24
chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics