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Optical coherent injection of carrier and current in twisted bilayer graphene 期刊论文
Physical Review B, 2022, 卷号: 105, 期号: 8, 页码: 9
作者:  Z. Zheng;  Y. Song;  Y. W. Shan;  W. Xin and J. L. Cheng
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Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 19, 页码: 19
作者:  P.Steindl;  E.M.Sala;  B.Alen;  D.F.Marron;  D.Bimberg
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single-photon source,temperature-dependence,excitonic recombination,raman-spectra,oxygen donor,gaas,emission,luminescence,photoluminescence,localization,Materials Science,Physics  
Electronic states of (InGa)(AsSb)/GaAs/GaP quantum dots 期刊论文
Physical Review B, 2019, 卷号: 100, 期号: 11, 页码: 14
作者:  P.Klenovsky;  A.Schliwa;  D.Bimberg
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cyclotron-resonance,strain distribution,optical-properties,semiconductors,energy,gap,heterostructures  
Plasmon-induced hot carrier transfer to the surface of three-dimensional topological insulators 期刊论文
Physical Review B, 2018, 卷号: 98, 期号: 7, 页码: 7
作者:  Paudel, H. P.;  Apalkov, V.;  Sun, X. J.;  Stockman, M. I.
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electrical detection  spin polarization  charge-current  transport  regime  Materials Science  Physics  
Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus 期刊论文
Physical Review B, 2017, 卷号: 96, 期号: 15
作者:  Wang, D.;  D. Han;  X. B. Li;  N. K. Chen;  D. West;  V. Meunier;  S. B. Zhang and H. B. Sun
浏览  |  Adobe PDF(1327Kb)  |  收藏  |  浏览/下载:336/94  |  提交时间:2018/06/13