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InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance 期刊论文
ACS PHOTONICS, 2018, 卷号: 5, 期号: 12, 页码: 4896-4902
作者:  Yu, Qingnan;  Li, Xue;  Jia, Yan;  Lu, Wei;  Zheng, Ming;  Zhang, Xing;  Ning, Yongqiang;  Wu, Jian
浏览  |  Adobe PDF(591Kb)  |  收藏  |  浏览/下载：585/151  |  提交时间：2019/05/22
tunable semiconductor lasers  well-island composite quantum-confined structure  In GaAs/GaAs material  gain characteristics  flat top  indium-rich islands