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Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
浏览  |  Adobe PDF(2069Kb)  |  收藏  |  浏览/下载：272/66  |  提交时间：2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide  
Band alignment of lattice-mismatched In0.82Ga0.18As/InP heterojunction determined by x-ray photoemission spectroscopy 期刊论文
Journal of Applied Physics, 2019, 卷号: 125, 期号: 10, 页码: 7
作者:  J.P.Li;  G.Q.Miao;  Z.W.Zhang;  X.Li;  H.Song;  H.Jiang;  Y.R.Chen
浏览  |  Adobe PDF(2185Kb)  |  收藏  |  浏览/下载：299/74  |  提交时间：2020/08/24
quantum-wells,discontinuity,offsets,heterostructures,edge,Physics  
Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells 期刊论文
Materials Research Bulletin, 2019, 卷号: 115, 页码: 196-200
作者:  Y.Song;  L.G.Zhang;  Y.G.Zeng;  Y.Y.Chen;  L.Qin;  Y.L.Zhou
浏览  |  Adobe PDF(1050Kb)  |  收藏  |  浏览/下载：259/104  |  提交时间：2020/08/24
Al0.07Ga0.22In0.71As quantum wells,Optical properties,Metal organic,chemical vapor deposition,Photoluminescence,Full width at half maximum,thermal-expansion,carrier localization,gaas,scattering,origin,model,shift,Materials Science  
High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang
浏览  |  Adobe PDF(971Kb)  |  收藏  |  浏览/下载：385/80  |  提交时间：2020/08/24
Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors  
InGaAs/GaAsP strain quantum well spatial light modulator with low voltage and high contrast ratio 期刊论文
Optik, 2019, 卷号: 182, 页码: 139-143
作者:  Y.B.Li;  Y.W.Huang;  Y.Q.Ning;  L.J.Wang
浏览  |  Adobe PDF(832Kb)  |  收藏  |  浏览/下载：345/69  |  提交时间：2020/08/24
Spatial light modulator (SLM),Asymmetric Fabry-Perot cavity,Multiple-quantum wells,Electro-optical device,Optical communication,electroabsorption modulators  
Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser 期刊论文
Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 5
作者:  Li Xiang;  Wang Hong;  Qiao Zhongliang;  Zhang Yu;  Xu Yingqiang;  Niu Zhichuan;  Tong Cunzhu;  Liu Chongyang
浏览  |  Adobe PDF(404Kb)  |  收藏  |  浏览/下载：610/139  |  提交时间：2019/09/17
Gallium compounds  Antimony compounds  III-V semiconductors  Indium antimonides  Quantum well lasers  Semiconductor lasers  Semiconductor quantum wells  
An effective approach to alleviating the thermal effect in microstripe array-LEDs via the piezo-phototronic effect 期刊论文
Materials Horizons, 2018, 卷号: 5, 期号: 1, 页码: 116-122
作者:  Du, C. H.;  Jing, L.;  Jiang, C. Y.;  Liu, T.;  Pu, X.;  Sun, J. M.;  Li, D. B.;  Hu, W. G.
浏览  |  Adobe PDF(2840Kb)  |  收藏  |  浏览/下载：432/142  |  提交时间：2019/09/17
light-emitting-diodes  quantum-wells  power  performance  compensation  efficiency  droop  Chemistry  Materials Science  
Effect of V-Pits on the Property of GaN Epilayer Grown by Metalorganic Chemical Vapor Deposition 期刊论文
Journal of Nanoscience and Nanotechnology, 2018, 卷号: 18, 期号: 11, 页码: 7527-7531
作者:  Fu, Y. H.;  Sun, X. J.;  Ben, J. W.;  Jiang, K.;  Jia, Y. P.;  Liu, H. A.;  Li, Z. M.;  Li, D. B.
浏览  |  Adobe PDF(5358Kb)  |  收藏  |  浏览/下载：404/127  |  提交时间：2019/09/17
GaN  MOCVD  Defects  V-Pits  raman-scattering  quantum-wells  nitrides  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian;  Sun, Xiaojuan;  Li, Dabing;  Gao, Hongwei;  Zhou, Yu;  Zhang, Shuming;  Li, Deyao;  Zhang, Liqun;  Liu, Jianping;  Wang, Huaibing;  Ikeda, Masao;  Zheng, Xinhe;  Yang, Hui
浏览  |  Adobe PDF(3885Kb)  |  收藏  |  浏览/下载：575/130  |  提交时间：2019/09/17
Ultraviolet lasers  Aluminum alloys  Aluminum gallium nitride  Aluminum nitride  Defects  Gallium alloys  III-V semiconductors  Lasers  Lattice mismatch  Quantum well lasers  Semiconductor alloys  Semiconductor quantum wells  Stresses  Thermal expansion