InGaAs/GaAsP strain quantum well spatial light modulator with low voltage and high contrast ratio

doi:10.1016/j.ijleo.2018.12.123

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	InGaAs/GaAsP strain quantum well spatial light modulator with low voltage and high contrast ratio
	Y.B.Li; Y.W.Huang; Y.Q.Ning; L.J.Wang
	2019
发表期刊	Optik
ISSN	0030-4026
卷号	182 页码:139-143
摘要	We report a spatial light modulator (SLM) which consisted of 40 pairs of InGaAs/GaAs/GaAsP multiple-quantum wells (MQWs) that embedded in an asymmetric Fabry-Perot (FP) cavity formed by highly reflective back distributed Bragg reflectors (DBRs) and moderate reflective top DBRs. The center wavelength of FP cavity was designed to have a 20 nm redshift in comparison to the luminescence peaks of MQWs. The relationship between optical absorption spectrum of MQWs and the applied negative voltages was modeled based on the quantum-confined stark effect (QCSE). Large area SLMs with 3 mm diameter were fabricated, which exhibited a high contrast ratio of 12:1 at similar or equal to 940 nm with only 2 V bias. The QCSE effect varying with the applied voltage and the cavity resonant wavelength shifting with the incident angle were also analyzed theoretically and experimentally. The device is promising to improve system performance and reduce power consumption of fast emerging high-speed data transmission within data centers and short board to board interconnects.
关键词	Spatial light modulator (SLM),Asymmetric Fabry-Perot cavity,Multiple-quantum wells,Electro-optical device,Optical communication,electroabsorption modulators
DOI	10.1016/j.ijleo.2018.12.123
URL	查看原文
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63234
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y.B.Li,Y.W.Huang,Y.Q.Ning,et al. InGaAs/GaAsP strain quantum well spatial light modulator with low voltage and high contrast ratio[J]. Optik,2019,182:139-143.
APA	Y.B.Li,Y.W.Huang,Y.Q.Ning,&L.J.Wang.(2019).InGaAs/GaAsP strain quantum well spatial light modulator with low voltage and high contrast ratio.Optik,182,139-143.
MLA	Y.B.Li,et al."InGaAs/GaAsP strain quantum well spatial light modulator with low voltage and high contrast ratio".Optik 182(2019):139-143.

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