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Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor 期刊论文
Advanced Optical Materials, 2019, 卷号: 7, 期号: 23, 页码: 9
作者:  D.Xiang;  T.Liu;  J.Y.Wang;  P.Wang;  L.Wang;  Y.Zheng;  Y.N.Wang
浏览  |  Adobe PDF(4150Kb)  |  收藏  |  浏览/下载：220/60  |  提交时间：2020/08/24
2D ReS2 transistors,bolometric modes,low noise equivalent power,fast,photoresponse,photocurrent polarity switching,sub-bandgap,photodetection,field-effect transistors,layer res2,graphene,optoelectronics,semiconductor,mos2,Materials Science,Optics  
Anomalous Ambipolar Phototransistors Based on All-Inorganic CsPbBr3 Perovskite at Room Temperature 期刊论文
Advanced Optical Materials, 2019, 卷号: 7, 期号: 21, 页码: 9
作者:  Y.T.Zou;  F.Li;  C.Zhao;  J.Xing;  Z.Yu;  W.L.Yu;  C.L.Guo
浏览  |  Adobe PDF(1375Kb)  |  收藏  |  浏览/下载：1219/76  |  提交时间：2020/08/24
charge transport,field effect transistors,mobility,perovskites,phototransistors,field-effect transistors,light-emitting-diodes,halide,perovskites,high-efficiency,mobility,performance,transport,tin,Materials Science,Optics  
Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang;  Z.W.Li;  L.Min
浏览  |  Adobe PDF(1409Kb)  |  收藏  |  浏览/下载：237/69  |  提交时间：2020/08/24
Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Electronic Level Alignment at an Indium Tin OxidePbI2 Interface and Its Applications for Organic Electronic Devices 期刊论文
Acs Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 10, 页码: 8909-8916
作者:  Song, Q. G.;  Lin, T.;  Sun, X.;  Chu, B.;  Su, Z. S.;  Yang, H. S.;  Li, W. L.;  Lee, C. S.
浏览  |  Adobe PDF(433Kb)  |  收藏  |  浏览/下载：493/170  |  提交时间：2019/09/17
lead iodide  n-type semiconductor  anode buffer layer  organic  electronic devices  light-emitting-diodes  near-infrared photodetectors  field-effect  transistors  transition-metal oxides  hole-injection layer  solar-cells  photovoltaic cells  buffer layer  delayed fluorescence  spectral  response  Science & Technology - Other Topics  Materials Science  
Molecular gated-AlGaNGaN high electron mobility transistor for pH detection 期刊论文
Analyst, 2018, 卷号: 143, 期号: 12, 页码: 2784-2789
作者:  Ding, X. Z.;  Yang, S.;  Miao, B.;  Gu, L.;  Gu, Z. Q.;  Zhang, J.;  Wu, B. J.;  Wang, H.;  Wu, D. M.;  Li, J. D.
浏览  |  Adobe PDF(3193Kb)  |  收藏  |  浏览/下载：336/109  |  提交时间：2019/09/17
field-effect transistors  gan surfaces  sensors  ion  deposition  stability  insulator  films  acid  Chemistry