Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor

doi:10.1002/adom.201901115

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	Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor
	D.Xiang; T.Liu; J.Y.Wang; P.Wang; L.Wang; Y.Zheng; Y.N.Wang
	2019
发表期刊	Advanced Optical Materials
ISSN	2195-1071
卷号	7 期号:23 页码:9
摘要	2D transition metal dichalcogenide (TMD)-based phototransistors generally work under photoconductive, photovoltaic, or photogating mode, in which photocarriers are generated from band-to-band excitation. Nevertheless, due to the relatively large bandgap, most TMD phototransistors working under these modes are restricted in visible spectrum. Here, photodetection in 2D multilayer rhenium disulfide (ReS2) transistor via bolometric mode, which relies on light heating induced conductance change instead of band-to-band photoexcitation is reported, making it possible for sub-bandgap photon detection. The bolometric effect induced photoresponse is first revealed by an anomalous sign switching of photocurrent from positive to negative while increasing gate voltage under visible light, which is further validated by the temperature dependent electrical transport measurements. The phototransistor exhibits remarkable photoresponse under infrared regime, beyond the optical bandgap absorption edge of the ReS2 flake. Additionally, it demonstrates a low noise equivalent power, less than 5 x 10(-2) pW Hz(-1/2), which is very promising for ultra-weak light detection. Moreover, the response time is below 3 ms, nearly 3-4 orders of magnitude faster than previously reported ReS2 photodetectors. The findings promise bolometric effect as an effective photodetection mode to extend the response spectrum of large bandgap TMDs for novel and high-performance broadband photodetectors.
关键词	2D ReS2 transistors,bolometric modes,low noise equivalent power,fast,photoresponse,photocurrent polarity switching,sub-bandgap,photodetection,field-effect transistors,layer res2,graphene,optoelectronics,semiconductor,mos2,Materials Science,Optics
DOI	10.1002/adom.201901115
收录类别	SCI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/62932
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	D.Xiang,T.Liu,J.Y.Wang,et al. Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor[J]. Advanced Optical Materials,2019,7(23):9.
APA	D.Xiang.,T.Liu.,J.Y.Wang.,P.Wang.,L.Wang.,...&Y.N.Wang.(2019).Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor.Advanced Optical Materials,7(23),9.
MLA	D.Xiang,et al."Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor".Advanced Optical Materials 7.23(2019):9.

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