Molecular gated-AlGaNGaN high electron mobility transistor for pH detection

doi:10.1039/c8an00032h

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	Molecular gated-AlGaNGaN high electron mobility transistor for pH detection
	Ding, X. Z.; Yang, S.; Miao, B.; Gu, L.; Gu, Z. Q.; Zhang, J.; Wu, B. J.; Wang, H.; Wu, D. M.; Li, J. D.
	2018
发表期刊	Analyst
ISSN	0003-2654
卷号	143 期号:12 页码:2784-2789
摘要	A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 mu A/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.
关键词	field-effect transistors gan surfaces sensors ion deposition stability insulator films acid Chemistry
DOI	10.1039/c8an00032h
收录类别	SCI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/60727
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Ding, X. Z.,Yang, S.,Miao, B.,et al. Molecular gated-AlGaNGaN high electron mobility transistor for pH detection[J]. Analyst,2018,143(12):2784-2789.
APA	Ding, X. Z..,Yang, S..,Miao, B..,Gu, L..,Gu, Z. Q..,...&Li, J. D..(2018).Molecular gated-AlGaNGaN high electron mobility transistor for pH detection.Analyst,143(12),2784-2789.
MLA	Ding, X. Z.,et al."Molecular gated-AlGaNGaN high electron mobility transistor for pH detection".Analyst 143.12(2018):2784-2789.

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