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Anisotropic optical phonons in MOCVD grown Si-doped GaN/Sapphire epilayers 期刊论文
Materials Science and Engineering B-Advanced Functional Solid-State Materials, 2020, 卷号: 260, 页码: 10
作者:  D. N. Talwar, H. H. Lin and Z. C. Feng
浏览  |  Adobe PDF(1439Kb)  |  收藏  |  浏览/下载：255/59  |  提交时间：2021/07/06
Development of structure and tuning ability of the luminescence of lead-free halide perovskite nanocrystals (NCs) 期刊论文
Chemical Engineering Journal, 2020
作者:  S. A. Khan,C. Li,A. Jalil,X. Xin,M. Rauf,J. Ahmed,M. A. M. Khan,B. Dong,J. Zhu and S. Agathopoulos
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Research Progress of Vertical-cavity Surface-emitting Laser 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2020, 卷号: 41, 期号: 12, 页码: 1443-1459
作者:  J.-Y. Zhang,X. Li,J.-W. Zhang,Y.-Q. Ning and L.-J. Wang
浏览  |  Adobe PDF(2251Kb)  |  收藏  |  浏览/下载：345/130  |  提交时间：2021/07/06
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
浏览  |  Adobe PDF(2009Kb)  |  收藏  |  浏览/下载：190/63  |  提交时间：2021/07/06
Visualizing the Anomalous Charge Density Wave States in Graphene/NbSe(2)Heterostructures 期刊论文
Advanced Materials, 2020, 卷号: 32, 期号: 45, 页码: 7
作者:  Y. Chen;  L. S. Wu;  H. Xu;  C. X. Cong;  S. Li;  S. Feng;  H. B. Zhang;  C. J. Zou;  J. Z. Shang;  S. Y. A. Yang;  K. P. Loh;  W. Huang and T. Yu
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Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN 期刊论文
Applied Surface Science, 2020, 卷号: 520, 页码: 9
作者:  K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li
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Thermal evolution and migration behavior of ion-implanted nitrogen in ZnO:In-N films 期刊论文
Applied Surface Science, 2020, 卷号: 509, 页码: 8
作者:  H. Zhang,W. J. Li,G. P. Qin,H. B. Ruan,D. Wang,J. Wang,Z. Huang,F. Wu,C. Y. Kong and L. Fang
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Thickness and strain engineering of structural and electronic properties for 2D square-octagon AlN 期刊论文
International Journal of Smart and Nano Materials, 2020, 卷号: 11, 期号: 3, 页码: 288-297
作者:  W. T. Hou,Z. B. Qi,H. Zang,Y. Yan and Z. M. Shi
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Polarization dependent infrared reflectivity studies of Si-doped MOCVD grown GaN/Sapphire epilayers 期刊论文
Materials Chemistry and Physics, 2020, 卷号: 252, 页码: 16
作者:  D. N. Talwar,H. H. Lin and Z. C. Feng
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Performance improvement of amorphous Ga 2 O 3 ultraviolet photodetector by annealing under oxygen atmosphere 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 840, 页码: 7
作者:  C. Q. Zhou,K. W. Liu,X. Chen,J. H. Feng,J. L. Yang,Z. Z. Zhang,L. Liu,Y. Xia and D. Z. Shen
浏览  |  Adobe PDF(1727Kb)  |  收藏  |  浏览/下载：189/70  |  提交时间：2021/07/06