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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
Adobe PDF(2009Kb)  |  收藏  |  浏览/下载:153/52  |  提交时间:2021/07/06
Ultrabroadband and independent polarization of optical amplification with InGaAs-based indium-rich cluster quantum-confined structure 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 5
作者:  M. Zheng;  Q. N. Yu;  X. Li;  H. X. Tai;  X. Zhang;  J. W. Zhang;  Y. Q. Ning and J. Wu
浏览  |  Adobe PDF(1827Kb)  |  收藏  |  浏览/下载:154/59  |  提交时间:2021/07/06
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
浏览  |  Adobe PDF(1823Kb)  |  收藏  |  浏览/下载:130/47  |  提交时间:2021/07/06
Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism 期刊论文
Applied Physics Letters, 2014, 卷号: 105, 期号: 19, 页码: 5
作者:  Chen Y. R.;  Song H.;  Jiang H.;  Li Z. M.;  Zhang Z. W.;  Sun X. J.;  Li D. B.;  Miao G. Q.
浏览  |  Adobe PDF(1846Kb)  |  收藏  |  浏览/下载:388/104  |  提交时间:2015/04/24
High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumped by accelerated electrons 期刊论文
Applied Physics Letters, 2014, 卷号: 104, 期号: 3, 页码: 4
作者:  Ni P. N.;  Shan C. X.;  Li B. H.;  Shen D. Z.
浏览  |  Adobe PDF(924Kb)  |  收藏  |  浏览/下载:344/76  |  提交时间:2015/04/24
Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices 期刊论文
Applied Physics Letters, 2009, 卷号: 95, 期号: 13
作者:  Wang L. K.;  Ju Z. G.;  Zhang J. Y.;  Zheng J.;  Shen D. Z.;  Yao B.;  Zhao D. X.;  Zhang Z. Z.;  Li B. H.;  Shan C. X.
Adobe PDF(583Kb)  |  收藏  |  浏览/下载:558/119  |  提交时间:2012/10/21
In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN 期刊论文
Applied Physics Letters, 2009, 卷号: 94, 期号: 23
作者:  Hu W. G.;  Ma B.;  Li D. B.;  Miyake H.;  Hiramatsu K.
Adobe PDF(755Kb)  |  收藏  |  浏览/下载:550/128  |  提交时间:2012/10/21
A direct first principles study on the structure and electronic properties of BexZn1-xO 期刊论文
Applied Physics Letters, 2007, 卷号: 91, 期号: 12
作者:  Fan X. F.;  Zhu Z.;  Ong Y. S.;  Lu Y. M.;  Shen Z. X.;  Kuo J. L.
Adobe PDF(522Kb)  |  收藏  |  浏览/下载:543/177  |  提交时间:2012/10/21