ZnO p-n junction light-emitting diodes fabricated on sapphire substrates

	ZnO p-n junction light-emitting diodes fabricated on sapphire substrates
其他题名	论文其他题名
	Jiao S. J.; Zhang Z. Z.; Lu Y. M.; Shen D. Z.; Yao B.; Zhang J. Y.; Li B. H.; Zhao D. X.; Fan X. W.; Tang Z. K.
	2006
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	88 期号:3
摘要	A ZnO p-n junction light-emitting diode (LED) was fabricated on a-plane Al2O3 substrate by plasma-assisted molecular-beam epitaxy. NO plasma activated by a radio frequency atomic source was used to grow the p-type ZnO layer of the LED. The current-voltage measurements at low temperatures showed a typical diode characteristic with a threshold voltage of about 4.0 V under forward bias. With increasing temperature, the rectification characteristic was degraded gradually, and faded away at room temperature. Electroluminescence band of the ZnO p-n junction LED was located at the blue-violet region and was weakened significantly with increase of temperature. This thermal quenching of the electroluminescence was attributed to the degradation of the diode characteristic with temperature. (c) 2006 American Institute of Physics.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26745
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jiao S. J.,Zhang Z. Z.,Lu Y. M.,et al. ZnO p-n junction light-emitting diodes fabricated on sapphire substrates[J]. Applied Physics Letters,2006,88(3).
APA	Jiao S. J..,Zhang Z. Z..,Lu Y. M..,Shen D. Z..,Yao B..,...&Tang Z. K..(2006).ZnO p-n junction light-emitting diodes fabricated on sapphire substrates.Applied Physics Letters,88(3).
MLA	Jiao S. J.,et al."ZnO p-n junction light-emitting diodes fabricated on sapphire substrates".Applied Physics Letters 88.3(2006).

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