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Theoretical investigation of strain-engineered WSe2 monolayers as anode material for Li-ion batteries 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 370-375
Authors:  J.Rehman;  R.Ali;  N.Ahmad;  X.D.Lv;  C.L.Guo
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2D materials,LIBs,Adsorption,Diffusion,Tensile strain,transition-metal dichalcogenides,electrode materials,crystalline wse2,mono layers,lithium,energy,adsorption,chemistry,graphene,storage,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Optoelectronic and solar cell applications of Janus monolayers and their van der Waals heterostructures 期刊论文
Physical Chemistry Chemical Physics, 2019, 卷号: 21, 期号: 34, 页码: 18612-18621
Authors:  M.Idrees;  H.U.Din;  R.Ali;  G.Rehman;  T.Hussain;  C.V.Nguyen
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transition-metal dichalcogenides,electronic-structures,optical-properties,semiconductors,generation,graphene,Chemistry,Physics  
Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition 期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10
Authors:  L.Wang;  L.Chen;  S.L.Wong;  X.Huang;  W.G.Liao;  C.X.Zhu
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chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics  
Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals 期刊论文
Nano Letters, 2018, 卷号: 18, 期号: 8, 页码: 5085-5090
Authors:  Xu, H.;  Han, D.;  Bao, Y.;  Cheng, F.;  Ding, Z. J.;  Tan, S. J. R.;  Loh, K. P.
View  |  Adobe PDF(483Kb)  |  Favorite  |  View/Download:144/14  |  Submit date:2019/09/17
Two-dimensional materials  MoSv phase transition  quantum spin Hall  effect (QSH)  scanning tunneling microscopy (STM)  single-layer mos2  generalized gradient approximation  transition-metal  dichalcogenides  molybdenum-disulfide  nanosheets  monolayer  stabilization  intercalation  1t-mos2  mote2  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals 期刊论文
Nano Letters, 2018, 卷号: 18, 期号: 8, 页码: 5085-5090
Authors:  Xu, H.;  Han, D.;  Bao, Y.;  Cheng, F.;  Ding, Z. J.;  Tan, S. J. R.;  Loh, K. P.
Favorite  |  View/Download:112/0  |  Submit date:2019/09/17
Two-dimensional materials  MoSv phase transition  quantum spin Hall  effect (QSH)  scanning tunneling microscopy (STM)  single-layer mos2  generalized gradient approximation  transition-metal  dichalcogenides  molybdenum-disulfide  nanosheets  monolayer  stabilization  intercalation  1t-mos2  mote2  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices 期刊论文
Advanced Materials, 2018, 卷号: 30, 期号: 52, 页码: 9
Authors:  Liu, T.;  Xiang, D.;  Zheng, Y.;  Wang, Y. A.;  Wang, X. Y.;  Wang, L.;  He, J.;  Liu, L.;  Chen, W.
View  |  Adobe PDF(1999Kb)  |  Favorite  |  View/Download:208/59  |  Submit date:2019/09/17
homogeneous p-n junctions and inverters  MoTe2/BN heterostructures  nonvolatile and programmable  photodoping in MoTe2 devices  photoresist-free  transition-metal dichalcogenides  black phosphorus  mos2  wse2  inverters  graphene  diodes  Chemistry  Science & Technology - Other Topics  Materials Science  Physics