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Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition 期刊论文
Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10
作者:  L.Wang;  L.Chen;  S.L.Wong;  X.Huang;  W.G.Liao;  C.X.Zhu
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chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics  
Theoretical investigation of strain-engineered WSe2 monolayers as anode material for Li-ion batteries 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 370-375
作者:  J.Rehman;  R.Ali;  N.Ahmad;  X.D.Lv;  C.L.Guo
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2D materials,LIBs,Adsorption,Diffusion,Tensile strain,transition-metal dichalcogenides,electrode materials,crystalline wse2,mono layers,lithium,energy,adsorption,chemistry,graphene,storage,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Optoelectronic and solar cell applications of Janus monolayers and their van der Waals heterostructures 期刊论文
Physical Chemistry Chemical Physics, 2019, 卷号: 21, 期号: 34, 页码: 18612-18621
作者:  M.Idrees;  H.U.Din;  R.Ali;  G.Rehman;  T.Hussain;  C.V.Nguyen
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transition-metal dichalcogenides,electronic-structures,optical-properties,semiconductors,generation,graphene,Chemistry,Physics