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中国科学院长春光学精密机械与物理研究所
Changchun Institute of Optics,Fine Mechanics and Physics,CAS
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Mid-Infrared Black Phosphorus Surface-Emitting Laser with an Open Microcavity
期刊论文
Acs Photonics, 2019, 卷号: 6, 期号: 7, 页码: 1581-1586
Authors:
Y.Q.Huang
;
J.Q.Ning
;
H.M.Chen
;
Y.J.Xu
;
X.Wang
;
X.T.Ge
;
C.Jiang
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Submit date:2020/08/24
black phosphorus,mid-infrared light sources,surface-emitting lasers,open cavity,lamellar structure,semiconductor
Photoinduced Orientation-Dependent Interlayer Carrier Transportation in Cross-Stacked Black Phosphorus van der Waals Junctions
期刊论文
Advanced Materials Interfaces, 2018, 卷号: 5, 期号: 20, 页码: 7
Authors:
Xin, W.
;
Jiang, H. B.
;
Li, X. K.
;
Zhou, X. F.
;
Lu, J. L.
;
Yang, J. J.
;
Guo, C.
;
Liu, Z. B.
;
Tian, J. G.
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Submit date:2019/09/17
anisotropy
black phosphorus
interlayer carrier transportation
scanning photocurrent imaging measurement
van der Waals junction
heterostructures
growth
mos2
Chemistry
Materials Science
Resolving the optical anisotropy of low-symmetry 2D materials
期刊论文
Nanoscale, 2018, 卷号: 10, 期号: 17, 页码: 8329-8337
Authors:
Shen, W. F.
;
Hu, C.
;
Tao, J.
;
Liu, J.
;
Fan, S. Q.
;
Wei, Y. X.
;
An, C. H.
;
Chen, J. C.
;
Wu, S.
;
Li, Y. N.
;
Liu, J.
;
Zhang, D. H.
;
Sun, L. D.
;
Hu, X. T.
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Submit date:2019/09/17
black phosphorus
inplane anisotropy
spectroscopy
air
optoelectronics
semiconductors
identification
transistors
transport
graphene
Chemistry
Science & Technology - Other Topics
Materials Science
Physics
Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices
期刊论文
Advanced Materials, 2018, 卷号: 30, 期号: 52, 页码: 9
Authors:
Liu, T.
;
Xiang, D.
;
Zheng, Y.
;
Wang, Y. A.
;
Wang, X. Y.
;
Wang, L.
;
He, J.
;
Liu, L.
;
Chen, W.
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Submit date:2019/09/17
homogeneous p-n junctions and inverters
MoTe2/BN heterostructures
nonvolatile and programmable
photodoping in MoTe2 devices
photoresist-free
transition-metal dichalcogenides
black phosphorus
mos2
wse2
inverters
graphene
diodes
Chemistry
Science & Technology - Other Topics
Materials Science
Physics
2D Phosphorene_ Epitaxial Growth and Interface Engineering for Electronic Devices
期刊论文
Advanced Materials, 2018, 卷号: 30, 期号: 47, 页码: 11
Authors:
Zhang, J. L.
;
Han, C.
;
Hu, Z. H.
;
Wang, L.
;
Liu, L.
;
Wee, A. T. S.
;
Chen, W.
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Submit date:2019/09/17
2D phosphorene
electronic devices
epitaxial growth
interface
engineering
layer black phosphorus
2-dimensional materials
band-gap
transport-properties
carrier mobility
blue phosphorus
graphene
surface
functionalization
semiconductors
Chemistry
Science & Technology - Other Topics
Materials Science
Physics