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Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals 期刊论文
Nano Letters, 2018, 卷号: 18, 期号: 8, 页码: 5085-5090
Authors:  Xu, H.;  Han, D.;  Bao, Y.;  Cheng, F.;  Ding, Z. J.;  Tan, S. J. R.;  Loh, K. P.
View  |  Adobe PDF(483Kb)  |  Favorite  |  View/Download：171/14  |  Submit date：2019/09/17
Two-dimensional materials  MoSv phase transition  quantum spin Hall  effect (QSH)  scanning tunneling microscopy (STM)  single-layer mos2  generalized gradient approximation  transition-metal  dichalcogenides  molybdenum-disulfide  nanosheets  monolayer  stabilization  intercalation  1t-mos2  mote2  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector 期刊论文
Acs Applied Materials & Interfaces, 2018, 卷号: 10, 期号: 50, 页码: 43299-43304
Authors:  Yu, M. M.;  Li, H.;  Liu, H.;  Qin, F. L.;  Gao, F.;  Hu, Y. X.;  Dai, M. J.;  Wang, L. F.;  Feng, W.;  Hu, P. A.
View  |  Adobe PDF(3276Kb)  |  Favorite  |  View/Download：241/64  |  Submit date：2019/09/17
Ga0.84In1.86Se  alloy engineering  photodetectors  two-dimensional  materials  III-VI group semiconductors  temperature  gase  inse  deposition  graphene  mobility  growth  films  Science & Technology - Other Topics  Materials Science  
Observation of Gap Opening in 1T ' Phase MoS2 Nanocrystals 期刊论文
Nano Letters, 2018, 卷号: 18, 期号: 8, 页码: 5085-5090
Authors:  Xu, H.;  Han, D.;  Bao, Y.;  Cheng, F.;  Ding, Z. J.;  Tan, S. J. R.;  Loh, K. P.
Favorite  |  View/Download：151/0  |  Submit date：2019/09/17
Two-dimensional materials  MoSv phase transition  quantum spin Hall  effect (QSH)  scanning tunneling microscopy (STM)  single-layer mos2  generalized gradient approximation  transition-metal  dichalcogenides  molybdenum-disulfide  nanosheets  monolayer  stabilization  intercalation  1t-mos2  mote2  Chemistry  Science & Technology - Other Topics  Materials Science  Physics  
High-performance and flexible photodetectors based on chemical vapor deposition grown two-dimensional In2Se3 nanosheets 期刊论文
Nanotechnology, 2018, 卷号: 29, 期号: 44, 页码: 6
Authors:  Feng, W.;  Gao, F.;  Hue, Y. X.;  Dai, M. J.;  Li, H.;  Wang, L. F.;  Hue, P.
View  |  Adobe PDF(1018Kb)  |  Favorite  |  View/Download：212/70  |  Submit date：2019/09/17
In2Se3  photodetector  flexible devices  two-dimensional materials  inse nanosheets  thin-film  responsivity  bandgap  gas  Science & Technology - Other Topics  Materials Science  Physics