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First principles investigation of Be3X2 (X = N, P, As) and their alloys for solar cell applications 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 795, 页码: 385-390
作者:  M.Ullah;  R.Ali;  G.Murtaza;  Y.Chen
Adobe PDF(3552Kb)  |  收藏  |  浏览/下载：151/47  |  提交时间：2020/08/24
Beryllium nitride alloys,Optical spectra,Device absorption,efficiencies,thermoelectric properties,structural-properties,electronic-structure,halide perovskites,optical-properties,crystal-structure,alpha-be3n2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Modified band alignment at multilayer MoS2/Al2O3 heterojunctions by nitridation treatment 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 793, 页码: 599-603
作者:  X.K.Liu;  K.L.Li;  X.J.Sun;  Z.M.Shi;  Z.H.Huang;  Z.W.Li;  L.Min
Adobe PDF(1409Kb)  |  收藏  |  浏览/下载：184/53  |  提交时间：2020/08/24
Multilayer MoS2,Al2O3 surface,NH3 treatment,Band alignment,field-effect transistor,layer mos2,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Theoretical investigation of strain-engineered WSe2 monolayers as anode material for Li-ion batteries 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 370-375
作者:  J.Rehman;  R.Ali;  N.Ahmad;  X.D.Lv;  C.L.Guo
Adobe PDF(1616Kb)  |  收藏  |  浏览/下载：193/68  |  提交时间：2020/08/24
2D materials,LIBs,Adsorption,Diffusion,Tensile strain,transition-metal dichalcogenides,electrode materials,crystalline wse2,mono layers,lithium,energy,adsorption,chemistry,graphene,storage,Chemistry,Materials Science,Metallurgy & Metallurgical Engineering  
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
作者:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
Adobe PDF(1456Kb)  |  收藏  |  浏览/下载：165/49  |  提交时间：2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry