中文版 | English

在结果中检索

CIOMP OpenIR

浏览/检索结果: 共4条，第1-4条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps 期刊论文
Crystengcomm, 2019, 卷号: 21, 期号: 33, 页码: 4864-4873
作者:  K.Jiang;  X.J.Sun;  J.W.Ben;  Z.M.Shi;  Y.P.Jia;  Y.Wu;  C.H.Kai
浏览  |  Adobe PDF(5687Kb)  |  收藏  |  浏览/下载：214/51  |  提交时间：2020/08/24
potential fluctuations,gan films,alxga1-xn,sapphire,quality,localization,relaxation,inversion  
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:  Z.M.Shi;  X.J.Sun;  Y.P.Jia;  X.K.Liu;  S.L.Zhang;  Z.B.Qi
浏览  |  Adobe PDF(778Kb)  |  收藏  |  浏览/下载：173/64  |  提交时间：2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics  
Van der Waals Epitaxy: A new way for growth of III-nitrides 期刊论文
Science China-Technological Sciences, 2019, 卷号: 63, 期号: 3, 页码: 528-530
作者:  Y.Chen;  Y.P.Jia;  Z.M.Shi;  X.J.Sun;  D.B.Li
Adobe PDF(443Kb)  |  收藏  |  浏览/下载：111/40  |  提交时间：2020/08/24
gan,layer,aln,Engineering,Materials Science  
Plasmon reflection reveals local electronic properties of natural graphene wrinkles 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 11, 页码: 5
作者:  R.K.Chen;  C.Yang;  Y.P.Jia;  L.W.Guo;  J.N.Chen
Adobe PDF(1187Kb)  |  收藏  |  浏览/下载：108/49  |  提交时间：2020/08/24
graphene plasmons,wrinkle,reflection,electronics,raman-spectroscopy,graphite,Physics