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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
作者:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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In situ fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors 期刊论文
Nanoscale Advances, 2020, 卷号: 2, 期号: 5, 页码: 1854-1858
作者:  Y. Wu,X. J. Sun,Z. M. Shi,Y. P. Jia,K. Jiang,J. W. Ben,C. H. Kai,Y. Wang,W. Lu and D. B. Li
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Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN 期刊论文
Applied Surface Science, 2020, 卷号: 520, 页码: 9
作者:  K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li
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Residual thickness enhanced core-removed D-shaped single-mode fiber and its application for VOC evaporation monitoring 期刊论文
Optics Express, 2020, 卷号: 28, 期号: 10, 页码: 15641-15651
作者:  H. D. Zheng,B. C. Huang,Y. H. Li,R. J. Zhang,X. H. Gu,Z. B. Li,H. Y. Lin,W. G. Zhu,J. Y. Tang,H. Y. Guan,H. H. Lu,Y. C. Zhong,J. B. Fang,Y. H. Luo,J. Zhang,J. H. Yu,F. K. Tittel and Z. Chen
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The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
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