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286 nm monolithic multicomponent system 期刊论文
Japanese Journal of Applied Physics, 2019, 卷号: 58, 期号: 1, 页码: 5
作者:  J.L.Yuan;  Y.Jiang;  Z.Shi;  X.M.Gao;  Y.J.Wang;  X.J.Sun
浏览  |  Adobe PDF(614Kb)  |  收藏  |  浏览/下载：179/64  |  提交时间：2020/08/24
light-emitting-diodes,integration,photodetectors,photonics,algan,leds,Physics  
Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing 期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 2, 页码: 9
作者:  J.Zhao;  X.H.Ding;  J.H.Miao;  J.F.Hu;  H.Wan;  S.J.Zhou
浏览  |  Adobe PDF(3485Kb)  |  收藏  |  浏览/下载：143/50  |  提交时间：2020/08/24
UV LEDs,double-layer ITO,pinhole pattern,current spreading,light,output power,thin-films,transparent,electrodes,efficiency,leds,surface,blue,inactivation,enhancement,irradiation,Science & Technology - Other Topics,Materials Science  
Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes 期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 3, 页码: 8
作者:  H.Wan;  B.Tang;  N.Li;  S.J.Zhou;  C.Q.Gui;  S.Liu
浏览  |  Adobe PDF(4909Kb)  |  收藏  |  浏览/下载：125/36  |  提交时间：2020/08/24
GaN-based UV LED,wet chemical etching,prism-structured sidewall,crystal orientation,light extraction,efficiency,surface,plane,enhancement,extraction,layer,Science & Technology - Other Topics,Materials Science  
Advances in narrow linewidth diode lasers 期刊论文
Science China-Information Sciences, 2019, 卷号: 62, 期号: 6, 页码: 13
作者:  X.K.Lang;  P.Jia;  Y.Y.Chen;  L.Qin;  L.Liang;  C.Chen
浏览  |  Adobe PDF(593Kb)  |  收藏  |  浏览/下载：206/76  |  提交时间：2020/08/24
diode lasers,narrow linewidth,internal cavity optical feedback,technology,external cavity optical feedback technology,solid-state  
996 nm high-power single-longitudinal-mode tapered gain-coupled distributed feedback laser diodes 期刊论文
Applied Optics, 2019, 卷号: 58, 期号: 23, 页码: 6426-6432
作者:  Y.X.Lei;  Y.Y.Chen;  F.Gao;  D.Z.Ma;  P.Jia;  H.Wu;  C.K.Ruan
浏览  |  Adobe PDF(1060Kb)  |  收藏  |  浏览/下载：193/51  |  提交时间：2020/08/24
dfb lasers,semiconductor-laser,linewidth,Optics  
Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells 期刊论文
Materials Research Bulletin, 2019, 卷号: 115, 页码: 196-200
作者:  Y.Song;  L.G.Zhang;  Y.G.Zeng;  Y.Y.Chen;  L.Qin;  Y.L.Zhou
浏览  |  Adobe PDF(1050Kb)  |  收藏  |  浏览/下载：163/74  |  提交时间：2020/08/24
Al0.07Ga0.22In0.71As quantum wells,Optical properties,Metal organic,chemical vapor deposition,Photoluminescence,Full width at half maximum,thermal-expansion,carrier localization,gaas,scattering,origin,model,shift,Materials Science  
Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall 期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 3, 页码: 8
作者:  B.Tang;  J.Miao;  Y.C.Liu;  H.Wan;  N.Li;  S.J.Zhou;  C.Q.Gui
浏览  |  Adobe PDF(4957Kb)  |  收藏  |  浏览/下载：175/50  |  提交时间：2020/08/24
flip-chip mini-LED,prism-structured sidewall,waveguide photons,light,extraction,emitting-diodes,gan,efficiency,performance,improvement,surface,Science & Technology - Other Topics,Materials Science  
Insights Into the Influence of Sidewall Morphology on the Light Extraction Efficiency of Mini-LEDs 期刊论文
Ieee Photonics Journal, 2019, 卷号: 11, 期号: 4, 页码: 7
作者:  B.Tang;  J.H.Miao;  Y.C.Liu;  S.J.Zhou;  H.H.Xu;  H.Wan
浏览  |  Adobe PDF(3171Kb)  |  收藏  |  浏览/下载：127/57  |  提交时间：2020/08/24
Light extraction efficiency,mini-LED,sidewall morphology,TMAH etching,emitting-diodes,enhancement,damage,layer,Engineering,Optics,Physics  
48 48 pixelated addressable full-color micro display based on flip-chip micro LEDs 期刊论文
Applied Optics, 2019, 卷号: 58, 期号: 31, 页码: 8383-8389
作者:  Y.Li;  J.Tao;  Y.Zhao;  J.Wang;  J.Lv;  Y.Qin;  J.Liang;  W.Wang
Adobe PDF(2071Kb)  |  收藏  |  浏览/下载：187/43  |  提交时间：2020/08/24
Light emitting diodes,Color,Etching,Flip chip devices,Pixels,Substrates  
990 nm High-Power High-Beam-Quality DFB Laser With Narrow Linewidth Controlled by Gain-Coupled Effect 期刊论文
Ieee Photonics Journal, 2019, 卷号: 11, 期号: 1, 页码: 9
作者:  Y.X.Lei;  Y.Y.Chen;  F.Gao;  D.Z.Ma;  P.Jia;  Q.Cheng;  H.Wu
浏览  |  Adobe PDF(2204Kb)  |  收藏  |  浏览/下载：139/38  |  提交时间：2020/08/24
Semiconductor lasers,gain-coupled DFB,single-longitudinal mode,narrow,linewidth,semiconductor-lasers,diodes,Engineering,Optics,Physics