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Nearly lattice-matched molybdenum disulfide/gallium nitride heterostructure enabling high-performance phototransistors 期刊论文
Photonics Research, 2019, 卷号: 7, 期号: 3, 页码: 311-317
Authors:  X.K.Liu;  Y.X.Chen;  D.B.Li;  S.W.Wang;  C.C.Ting;  L.Chen
View  |  Adobe PDF(1124Kb)  |  Favorite  |  View/Download:44/4  |  Submit date:2020/08/24
mos2 atomic layers,large-area,thin-layers,graphene,growth,optoelectronics,hysteresis,Optics  
Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors 期刊论文
Photonics Research, 2019, 卷号: 7, 期号: 10, 页码: 1127-1133
Authors:  Y.Wu;  Z.Li;  K.-W.Ang;  Y.Jia;  Z.Shi;  Z.Huang;  W.Yu;  X.Sun;  X.Liu;  D.Li
View  |  Adobe PDF(1690Kb)  |  Favorite  |  View/Download:49/4  |  Submit date:2020/08/24
Monolithic integrated circuits,Chemical vapor deposition,Gallium nitride,III-V semiconductors,Integration,Layered semiconductors,Military applications,Molybdenum compounds,Optical communication,Photodetectors,Photons,Wide band gap semiconductors