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High temperature characteristics of a 2 m InGaSb/AlGaAsSb passively mode-locked quantum well laser 期刊论文
Applied Physics Letters, 2019, 卷号: 114, 期号: 22, 页码: 4
作者:  X.Li;  H.Wang;  Z.L.Qiao;  X.Guo;  W.J.Wang;  J.X.B.Sia;  G.I.Ng
浏览  |  Adobe PDF(1795Kb)  |  收藏  |  浏览/下载:162/44  |  提交时间:2020/08/24
locking,Physics  
High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang
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Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors