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High temperature characteristics of a 2 m InGaSb/AlGaAsSb passively mode-locked quantum well laser
X.Li; H.Wang; Z.L.Qiao; X.Guo; W.J.Wang; J.X.B.Sia; G.I.Ng
2019
发表期刊Applied Physics Letters
ISSN0003-6951
卷号114期号:22页码:4
摘要A monolithic two-section InGaSb/AlGaAsSb single quantum well mode-locked laser (MLL) emitting at 2m is demonstrated. The laser is able to lase in the continuous wave mode up to 80 degrees C, and passive mode locking operation with a fundamental repetition frequency of approximate to 18.4GHz is observed up to 60 degrees C. The laser has a characteristic temperature T-0 of approximate to 88K near room temperature, which is only slightly affected by the absorber bias voltage (V-a). One consequence of this finding is verified by the temperature-independent power ratios before lasing. The variations of the repetition frequency with gain current (I-g) and temperature (T) have also been systematically investigated. In the bias range in this work, the repetition frequency increases as a whole by more than 30MHz when the temperature is raised from 20 to 40 degrees C. Frequency tuning of approximate to 130 and approximate to 60MHz was observed at 20 and 40 degrees C, respectively. The results and their mechanism analysis provide guidelines for GaSb-based MLLs to better meet the application-required repetition frequencies even with the presence of an unwanted increase in temperature.
关键词locking,Physics
DOI10.1063/1.5096447
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收录类别SCI ; EI
语种英语
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文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/63243
专题中国科学院长春光学精密机械与物理研究所
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GB/T 7714
X.Li,H.Wang,Z.L.Qiao,et al. High temperature characteristics of a 2 m InGaSb/AlGaAsSb passively mode-locked quantum well laser[J]. Applied Physics Letters,2019,114(22):4.
APA X.Li.,H.Wang.,Z.L.Qiao.,X.Guo.,W.J.Wang.,...&G.I.Ng.(2019).High temperature characteristics of a 2 m InGaSb/AlGaAsSb passively mode-locked quantum well laser.Applied Physics Letters,114(22),4.
MLA X.Li,et al."High temperature characteristics of a 2 m InGaSb/AlGaAsSb passively mode-locked quantum well laser".Applied Physics Letters 114.22(2019):4.
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