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Mechanism of a-AlN Surface Morphology Evolution by High Temperature Annealing 期刊论文
Faguang Xuebao/Chinese Journal of Luminescence, 2021, 卷号: 42, 期号: 6, 页码: 810-817
作者:  J.-E. Sui;  J.-W. Ben;  H. Zang;  K. Jiang;  S.-L. Zhang;  B.-L. Guo;  Y. Chen;  Z.-M. Shi;  Y.-P. Jia;  D.-B. Li and X.-J. Sun
浏览  |  Adobe PDF(3595Kb)  |  收藏  |  浏览/下载：163/69  |  提交时间：2022/06/13
Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文
Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16
作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu;  C.-X.Shan
浏览  |  Adobe PDF(2069Kb)  |  收藏  |  浏览/下载：159/31  |  提交时间：2020/08/24
Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide