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Ultraviolet photodetectors based on wide bandgap oxide semiconductor films 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 4, 页码: 11
作者:  C.Q.Zhou;  Q.Ai;  X.Chen;  X.H.Gao;  K.W.Liu;  D.Z.Shen
浏览  |  Adobe PDF(2797Kb)  |  收藏  |  浏览/下载：149/45  |  提交时间：2020/08/24
Photodetector,ultraviolet,oxide semiconductor film,solar-blind photodetector,msm uv photodetector,thin-film,fast-response,optoelectronic properties,performance enhancement,electrical-properties,schottky contacts,crystal-structure,zno,nanowire,Physics  
High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 3
作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang
浏览  |  Adobe PDF(971Kb)  |  收藏  |  浏览/下载：156/52  |  提交时间：2020/08/24
Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors