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Understanding efficiency improvements of betavoltaic batteries based on 4H-SiC, GaN, and diamond 期刊论文
Applied Physics Letters, 2022, 卷号: 121, 期号: 10, 页码: 8
作者:  R. Z. Zheng;  J. B. Lu;  Y. Wang;  Z. Y. Chen;  X. Zhang;  X. Y. Li;  L. Liang;  L. Qin;  Y. G. Zeng;  Y. Y. Chen and Y. M. Liu
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Theoretical prediction of output performance of 63NiO-Si heterojunction betavoltaic cell 期刊论文
Applied Physics Letters, 2022, 卷号: 121, 期号: 8
作者:  Y. Wang;  R. Zheng;  J. Lu;  X. Li;  Z. Chen;  X. Zhang;  Y. Zhang;  L. Liang;  Y. Zeng;  L. Qin and Y. Liu
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Grain boundary-driven magnetism in aluminum nitride 期刊论文
Applied Physics Letters, 2022, 卷号: 36951, 期号: 121, 页码: 24
作者:  Z. Shi;  H. Zang;  X. Ma;  Y. Yang;  K. Jiang;  Y. Chen;  Y. Jia;  X. Sun and D. Li
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Charging storage phosphors using a white flashlight via the upconversion approach 期刊论文
Applied Physics Letters, 2022, 卷号: 121, 期号: 19, 页码: 6
作者:  T. X. Shi;  F. Chen;  X. Y. Zhao;  J. H. Zhang;  X. J. Wang and F. Liu
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Generation of integer and fractional perfect vortex beams using all-dielectric geometrical phase metasurfaces 期刊论文
Applied Physics Letters, 2022, 卷号: 120, 期号: 20, 页码: 7
作者:  K. X. Cheng;  Z. X. Liu;  Z. D. Hu;  G. Y. Cao;  J. J. Wu and J. C. Wang
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Super-broadband geometric phase devices based on circular polarization converter with mirror symmetry 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 10
作者:  W. Chen;  Y. Yu;  Q. Mu;  J. Campos;  Q. Wang;  S. Li;  S. Zhang and L. Xuan
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Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2 mu m 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 14, 页码: 4
作者:  X. Li,H. Wang,Z. L. Qiao,J. X. B. Sia,W. J. Wang,X. Guo,Y. Zhang,Z. C. Niu,C. Z. Tong and C. Y. Liu
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Ultrabroadband and independent polarization of optical amplification with InGaAs-based indium-rich cluster quantum-confined structure 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 5
作者:  M. Zheng;  Q. N. Yu;  X. Li;  H. X. Tai;  X. Zhang;  J. W. Zhang;  Y. Q. Ning and J. Wu
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The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
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Defects controlled doping and electrical transport in TiS2 single crystals 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 12, 页码: 5
作者:  K. Chen,M. Song,Y. Y. Sun,H. Xu,D. C. Qi,Z. H. Su,X. Y. Gao,Q. Xu,J. Hu,J. F. Zhu,R. R. Zhang,J. Wang,L. Zhang,L. Cao,Y. Y. Han and Y. M. Xiong
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