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Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy 期刊论文
Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2000, 卷号: 77, 期号: 1, 页码: 24-26
作者:  Zhang Z. C.;  Qin X. Y.;  Cui D. L.;  Kong X. G.;  Huang B. B.;  Jiang M. H.
Adobe PDF(90Kb)  |  收藏  |  浏览/下载：575/157  |  提交时间：2012/10/21
The g factor-shift in ZnS : Mn2+ nanocrystals/pyrex glasses composites 期刊论文
Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2000, 卷号: 75, 期号: 1, 页码: 78-81
作者:  Liu C. X.;  Liu J. Y.;  Xu W.
Adobe PDF(102Kb)  |  收藏  |  浏览/下载：567/105  |  提交时间：2012/10/21
The syntheses of a soluble diacetylene and its polymer with push-pull azobenzene and pyrimidine ring attached 期刊论文
Synthetic Metals, 2000, 卷号: 113, 期号: 1—2, 页码: 73-76
作者:  Wang J. H.;  Shen Y. Q.;  Yu C. X.;  Zheng J.
Adobe PDF(108Kb)  |  收藏  |  浏览/下载：584/126  |  提交时间：2012/10/21
Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film 期刊论文
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 2000, 卷号: 39, 期号: 4A, 页码: 1769-1770
作者:  Xu X. L.;  Hou Y. B.;  Xu Z.;  Wang X. W.;  Xu X. R.
Adobe PDF(58Kb)  |  收藏  |  浏览/下载：447/90  |  提交时间：2013/03/27
Up-conversion fluorescence in MBE-grown Nd3+-doped LaF3/CaF2 waveguides 期刊论文
Journal of Luminescence, 2000, 页码: 1011-1013
作者:  Zhang X.;  Daran E.;  Serrano C.;  Lahoz F.
Adobe PDF(112Kb)  |  收藏  |  浏览/下载：485/119  |  提交时间：2012/10/21
Laser undulator radiation 期刊论文
Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment, 2000, 卷号: 445, 期号: 1—3, 页码: 241-246
作者:  Kawamura Y.;  Li D. J.;  Ruschin S.;  Tanabe T.;  Toyoda K.
Adobe PDF(209Kb)  |  收藏  |  浏览/下载：507/132  |  提交时间：2012/10/21
Infrared-laser-induced upconversion from Nd3+: LaF3 heteroepitaxial layers on CaF2(111) substrates by molecular beam epitaxy 期刊论文
Physical Review B, 2000, 卷号: 62, 期号: 7, 页码: 4446-4454
作者:  Zhang X.;  Serrano C.;  Daran E.;  Lahoz F.;  Lacoste G.;  MunozYague A.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：540/94  |  提交时间：2012/10/21
Effects of distance between wells on band structure and characteristics of InGaAs/InGaAsP strain-compensated multiple quantum well lasers 期刊论文
Solid-State Electronics, 2000, 卷号: 44, 期号: 12, 页码: 2123-2129
作者:  Ma C. S.;  Wang L. J.;  Liu S. Y.
Adobe PDF(233Kb)  |  收藏  |  浏览/下载：470/123  |  提交时间：2012/10/21