Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film

	Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film
	Xu X. L.; Hou Y. B.; Xu Z.; Wang X. W.; Xu X. R.
	2000
发表期刊	Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers
ISSN	0021-4922
卷号	39 期号:4A 页码:1769-1770
摘要	A novel electroluminescence oxide phosphor (Gd2O3-Ga2O3):Ce has been prepared by electron beam evaporation. The emission peaks of photoluminescence lie at 390nm and a shoulder at 440nm. However, the electroluminescence of the (Gd2O3-Ga2O3):Ce thin film have four emission peaks at 358nm, 390nm, 439nm and 510nm, respectively. The optical absorption of (Gd2O3-Ga2O3):Ce thin film and the photoluminescence of composite materials with various ratios of Ga2O3/(Gd2O3+Ga2O3) have also been described to investigate the origin of emission of photoluminescence and electroluminescence.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34101
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xu X. L.,Hou Y. B.,Xu Z.,et al. Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film[J]. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers,2000,39(4A):1769-1770.
APA	Xu X. L.,Hou Y. B.,Xu Z.,Wang X. W.,&Xu X. R..(2000).Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film.Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers,39(4A),1769-1770.
MLA	Xu X. L.,et al."Photoluminescence and electroluminescence of (Gd2O3-Ga2O3): Ce thin film".Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers 39.4A(2000):1769-1770.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
bj01277267.pdf（58KB）			开放获取	--	浏览下载