Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

	Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy
其他题名	论文其他题名
	Zhang Z. C.; Qin X. Y.; Cui D. L.; Kong X. G.; Huang B. B.; Jiang M. H.
	2000
发表期刊	Materials Science and Engineering B-Solid State Materials for Advanced Technology
ISSN	0921-5107
卷号	77 期号:1 页码:24-26
摘要	The crystal perfection in GaP film grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy has been studied by the use of double crystal X-ray diffraction, backscattering spectrometry and Raman scattering techniques. By means of the morphology and full-width at half maximum of X-ray diffraction peak for the GaP epilayers, the growth temperature and V/III ratio were optimized. In the temperature range from 720 to 800 degrees C and with the V/III ratio range from 10 to 80, it was concluded that the optimum growth temperature was 800 degrees C with a V/III ratio of approximately 15. The result of backscattering spectrometry revealed that the minimum yield for the GaP epilayer grown under nearly optimized growth conditions exceeded that for a perfect crystal. In addition, the residual strain of GaP epilayer was calculated by using a biaxial stress model and Raman scattering measurement. (C) 2000 Elsevier Science S.A. All rights reserved.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/25266
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang Z. C.,Qin X. Y.,Cui D. L.,et al. Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy[J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology,2000,77(1):24-26.
APA	Zhang Z. C.,Qin X. Y.,Cui D. L.,Kong X. G.,Huang B. B.,&Jiang M. H..(2000).Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy.Materials Science and Engineering B-Solid State Materials for Advanced Technology,77(1),24-26.
MLA	Zhang Z. C.,et al."Crystal characterization of GaP epilayer grown on GaAs by atmospheric pressure metalorganic vapor phase epitaxy".Materials Science and Engineering B-Solid State Materials for Advanced Technology 77.1(2000):24-26.

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